Lithographically patterned nanowire electrodeposition

• US 8,142,984 B2
• Filed: 08/21/2007
• Issued: 03/27/2012
• Est. Priority Date: 08/24/2006
• Status: Active Grant

• Current Assignee: Regents of the University of California (University of California)
• Original Assignee: Regents of the University of California (University of California)
• Inventors: Penner, Reginald M., Menke, Erik J., Thompson, Michael A., Xiang, Chengxiang
• Primary Examiner(s): Walke, Amanda C.
• Application Number:
  US12/376,209
• Publication Number:
  US 20090197209A1
• Time in Patent Office: 1,680 Days
• Field of Search: 430/270.1, 430/311, 430/318, 430/322, 430/331
• US Class Current: 430/311
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: C23C 14/18 on other inorganic substrates
• CPC Class Codes: C23C 14/546 using crystal oscillators
• CPC Class Codes: C23C 14/5873 Removal of material
• CPC Class Codes: C25D 1/006 Nanostructures, e.g. using aluminium anodic oxidation templates [AAO]
• CPC Class Codes: C25D 1/04 Wires; Strips; Foils
• CPC Class Codes: C25D 5/022 using masking means

Abstract

Lithographically patterned nanowire electrodeposition (LPNE) combines attributes of photolithography with the versatility of bottom-up electrochemical synthesis. Photolithography is employed to define the position of a sacrificial nanoband electrode, preferably formed from a metal such as nickel, copper, silver, gold or the like, which is stripped using electrooxidation or a chemical etchant to advantageously recess the nanoband electrode between a substrate surface and the photoresist to form a trench defined by the substrate surface, the photoresist and the nanoband electrode. The trench acts as a “nanoform” to form an incipient nanowire during its electrodeposition. The width of the nanowire is determined by the electrodeposition duration while its height is determined by the height of the nanoband electrode.

Claims

1. A method for forming metal nanowires comprising the steps of

depositing a metal electrode layer on an insulator substrate,

depositing a layer of photoresist on the metal electrode layer,

photo lithographically patterning the photoresist exposing portions of the metal electrode layer,

stripping the exposed portion of metal layer from the substrate and forming a trench defined by the photoresist, the substrate and the metal electrode layer, and

electrodepositing a metal nanowire at the metal electrode layer within the trench.

2. The method of claim 1 wherein the metal nanowire has a height dimension corresponding to the thickness of the metal electrode layer.

3. The method of claim 2 wherein the metal nanowire has a width dimension that is a function of the duration of the electrodeposition process.

4. The method of claim 3 where in the width dimension is defined as

w(t)=J_dept_depV_m/nF 

 

(1)

where t_dep is the deposition time, V_m is the molar volume of the deposited metal, n is the number of electrons required to reduce each metal complex ion, and F is the Faraday constant (96485 C eq.<sup>−

1</sup>).

5. The method of claim 1 wherein the metal electrode layer is formed of one metal from of a group of metals consisting of nickel, copper, silver, and gold.

6. The method of claim 1 wherein the nanowire is formed of one metal from of a group of metals consisting of gold, palladium, platinum, cadmium, and bismuth.

7. The method of claim 1 wherein the nanowire is formed of metalloid.

8. The method of claim 1 wherein the step of photo lithographically patterning the photoresist includes

covering the photoresist with a mask having a predetermined pattern,

exposing the photoresist to ultra violet light, and

developing the photoresist exposed to ultra violet light and removing non-exposed photoresesist

removing the exposed electrode material such that it is recessed within the horizontal trench defined by the substrate and photoresist.

9. The method of claim 1 wherein the step of stripping the exposed portion of metal electrodlayer from the substrate and forming a trench includes electroxidation of the metal electrode layer.

10. The method of claim 1 wherein the step of stripping the exposed portion of metal electrodlayer from the substrate and forming a trench includes chemically etching the metal electrode layer.

11. A method of patterning metal nanowires on a substrate comprising the steps of:

photo lithographically forming a nanoband electrode on a substrate in a predetermined pattern,

electrodepositing a metal at the nanoband electrode to form a nanowire, and

removing the nanoband electrode from the substrate.

12. The method of claim 11 wherein the nanoband electrode is formed from nickel, copper, silver, or gold.

13. The method of claim 11 wherein the nanowire is formed of gold, palladium, platinum, cadmium, or bismuth.

14. The method of claim 11 wherein the nanowire is formed from a mettalloid.

15. The method of claim 11 wherein the step of forming the nanoband electrode includes

depositing a film of metal for a sacrificial nanoband electrode on the substrate,

patterning photoresist over the film,

developing the photoresist,

removing the exposed electrode material such that it is recessed between the photoresist and substrate forming trench defined by the substrate, electrode and photoresist.

16. The method of claim 11 wherein the metal nanowire has a height dimension corresponding to the thickness of the nanoband electrode layer.

17. The method of claim 16 wherein the metal nanowire has a width dimension that is a function of the duration of the electrodeposition process.

18. The method of claim 17 where in the width dimension is defined as

w(t)=J_dept_depV_m/nF 

 

(1)

where t_dep is the deposition time, V_m is the molar volume of the deposited metal, n is the number of electrons required to reduce each metal complex ion, and F is the Faraday constant (96485 C eq.<sup>−

1</sup>).

19. The method of claim 11 wherein the nanowire has a square cross-section.

20. The method of claim 19 wherein the nanowire has height and width dimension of about 6 nm in height and about 20 nm in width.