Wafer bonding of micro-electro mechanical systems to active circuitry

• US 8,143,082 B2
• Filed: 03/14/2007
• Issued: 03/27/2012
• Est. Priority Date: 12/15/2004
• Status: Active Grant

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: Avago Technologies Wireless IP Singapore Pte Limited (Broadcom, Inc.)
• Inventors: Dungan, Thomas E., Fazzio, Ronald S.
• Primary Examiner(s): Nhu, David
• Application Number:
  US11/686,243
• Publication Number:
  US 20100267182A1
• Time in Patent Office: 1,840 Days
• Field of Search: 438/50, 438/52, 438/106, 438/199, 438/238, 438/381, 257/E21.499, 257/305, 257/613, 257/632, 257/E29.324
• US Class Current: 438/50
• CPC Class Codes: B81C 1/0023 Packaging together an electronic processing unit die and a micromechanical structure die MEMS packages B81B7/0032; MEMS packaging processes B81C1/00261
• CPC Class Codes: B81C 2203/0118 Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
• CPC Class Codes: H01L 2224/02377 Fan-in arrangement
• CPC Class Codes: H01L 2224/0554 External layer
• CPC Class Codes: H01L 2224/0555 Shape
• CPC Class Codes: H01L 2224/0556 Disposition
• CPC Class Codes: H01L 2224/0557 the external layer being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05571 the external layer being disposed in a recess of the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/13025 the bump connector being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/1461 MEMS
• CPC Class Codes: H03H 9/0547 consisting of a vertical arrangement H03H9/0566 takes precedence

Abstract

A single integrated wafer package includes a micro electromechanical system (MEMS) wafer, an active device wafer, and a seal ring. The MEMS wafer has a first surface and includes at least one MEMS component on its first surface. The active device wafer has a first surface and includes an active device circuit on its first surface. The seal ring is adjacent the first surface of the MEMS wafer such that a seal is formed about the MEMS component. An external contact is provided on the wafer package. The external contact is accessible externally to the wafer package and is electrically coupled to the active device circuit of the active device wafer.

Claims

1. A method for fabricating a wafer package, the method comprising:

providing an active device wafer with a first surface, the active device wafer having an active device circuit on its first surface;

providing a micro electromechanical system (MEMS) wafer with a first surface, the MEMS wafer having at least one MEMS component on its first surface;

attaching a microcap and a seal ring adjacent the MEMS wafer such that the seal ring and microcap seal a MEMS component;

forming vias in the microcap;

fabricating contacts within the vias that are electrically coupled to the MEMS wafer;

fabricating columns between the active device wafer and the contacts thereby electrically coupling the active device wafer and the MEMS wafer; and

providing an electrical contact point to the wafer package that is accessible externally to the wafer package.

2. The method of claim 1, wherein the seal ring and microcap seal formed about the MEMS component comprises a hermetic seal.

3. The method of claim 1, wherein the MEMS component is one of a group comprising a thin film acoustic resonator (FBAR) and a solidly mounted acoustic resonator (SMR).

4. The method of claim 1 further including forming vias in the active device wafer to provide electrical connection to at least one of the group comprising the active device circuit and the MEMS component.

5. The method of claim 4 further including fabricating contacts within the vias of the active device wafer that are electrically coupled to at least one of the group comprising the active device circuit and the MEMS component.

6. The method of claim 5 further including forming vias in the MEMS wafer to provide electrical connection to at least one of the group comprising the active device circuit and the MEMS component.

7. A method for fabricating a wafer package, the method comprising:

providing an active device wafer with a first surface, the active device wafer having an active device circuit on its first surface;

placing a micro electromechanical system (MEMS) wafer with a first surface adjacent the first surface of the active device wafer, the MEMS wafer having at least one MEMS component on its first surface;

fabricating columns between the active device wafer and the MEMS wafer thereby electrically coupling the active device circuit and the MEMS wafer, including forming a ring column surrounding and thereby sealing the MEMS component between the active device wafer and the MEMS wafer;

forming at least one via in at least one of the group comprising the MEMS wafer and the active device wafer;

fabricating a via contact within the via that is electrically coupled to at least one of the columns; and

providing an external contact coupled to via contact, wherein the external contact is accessible externally to the wafer package and is electrically coupled to at least one of the group comprising the MEMS component and the active device circuit.

8. The method of claim 7, wherein the ring column is not solid such that it includes gaps.

9. The method of claim 8 wherein the MEMS component is passivated.

10. The method of claim 7, wherein a seal formed about the MEMS component comprises a hermetic seal.

11. The method of claim 7, wherein the MEMS component is one of a group comprising a thin film acoustic resonator (FBAR) and a solidly mounted acoustic resonator (SMR).