Method for manufacturing thin film transistor using oxide semiconductor and display apparatus
First Claim
1. A method of manufacturing a thin film transistor having on a substrate, at least a gate electrode, a first insulating film, an oxide semiconductor layer, a second insulating film, a source electrode and a drain electrode, comprising the steps of:
- forming a gate electrode on a substrate;
forming a first insulating film on the gate electrode;
forming an oxide semiconductor layer on the first insulating film with an amorphous oxide containing at least In and Zn;
patterning the first insulating film;
patterning the oxide semiconductor layer;
forming a second insulating film on the oxide semiconductor layer in an oxidative-gas-containing atmosphere;
patterning the second insulating film to expose a pair of contact regions in the oxide semiconductor layer and lower the electric resistance of the contact regions by generating oxygen defects in the contact regions;
forming an electrode layer on the pair of contact regions; and
patterning the electrode layer to form a source electrode and a drain electrode.
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Accused Products
Abstract
A thin film transistor is manufactured by forming a gate electrode on a substrate, forming a first insulating film on the gate electrode, forming an oxide semiconductor layer on the first insulating film with an amorphous oxide, patterning the first insulating film, patterning the oxide semiconductor layer, forming a second insulating film on the oxide semiconductor layer in an oxidative-gas-containing atmosphere, patterning the second insulating film to expose a pair of contact regions, forming an electrode layer on the pair of contact regions, and patterning the electrode layer to for a source electrode and a drain electrode.
214 Citations
10 Claims
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1. A method of manufacturing a thin film transistor having on a substrate, at least a gate electrode, a first insulating film, an oxide semiconductor layer, a second insulating film, a source electrode and a drain electrode, comprising the steps of:
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forming a gate electrode on a substrate; forming a first insulating film on the gate electrode; forming an oxide semiconductor layer on the first insulating film with an amorphous oxide containing at least In and Zn; patterning the first insulating film; patterning the oxide semiconductor layer; forming a second insulating film on the oxide semiconductor layer in an oxidative-gas-containing atmosphere; patterning the second insulating film to expose a pair of contact regions in the oxide semiconductor layer and lower the electric resistance of the contact regions by generating oxygen defects in the contact regions; forming an electrode layer on the pair of contact regions; and patterning the electrode layer to form a source electrode and a drain electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of manufacturing a thin film transistor having on a substrate, at least a gate electrode, an oxide semiconductor layer, an insulating film, a source electrode and a drain electrode, comprising the steps of:
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forming an oxide semiconductor layer on a substrate with an amorphous oxide containing at least In and Zn; patterning the oxide semiconductor layer; forming an insulating film on the oxide semiconductor layer in an oxidative-gas-containing atmosphere; patterning the insulating film to expose a pair of contact regions in the oxide semiconductor layer and lower the electric resistance of the pair of contact regions by generating oxygen defects in the contact regions; forming an electrode layer on the pair of contact regions and on the insulating film; and patterning the electrode layer to form a source electrode, a drain electrode and a gate electrode.
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Specification