Semiconductor nanowire and its manufacturing method
First Claim
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1. A method for fabricating a semiconductor nanowire that has first and second regions, the method comprising:
- putting a catalyst particle on a substrate;
growing the first region from the catalyst particle with a vapor-liquid-solid phase (VLS) grower;
forming a protective coating on a sidewall of the first region; and
growing the second region extending from the first region with the VLS grower.
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Abstract
A method for fabricating a semiconductor nanowire that has first and second regions is provided. A catalyst particle is put on a substrate. A first source gas is introduced, thereby growing the first region from the catalyst particle via a vapor-liquid-solid phase growth. A protective coating is formed on a sidewall of the first region, and a second source gas is introduced to grow the second region extending from the first region via the liquid-solid-phase growth.
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Citations
18 Claims
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1. A method for fabricating a semiconductor nanowire that has first and second regions, the method comprising:
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putting a catalyst particle on a substrate; growing the first region from the catalyst particle with a vapor-liquid-solid phase (VLS) grower; forming a protective coating on a sidewall of the first region; and growing the second region extending from the first region with the VLS grower. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor nanowire comprising:
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a first region including a dopant in a concentration of at least 1×
1019 atoms/cm3;a second region, arranged continuously with the first region in a longitudinal direction thereof and including one of a first dopant in a concentration of at most 1×
1018 atoms/cm3 and no dopant; anda third region arranged continuously with the second region in the longitudinal direction thereof and including a second dopant in a concentration of at least 1×
1019 atoms/cm3. - View Dependent Claims (15)
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16. A semiconductor nanowire, comprising:
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a first region including a dopant; a second region having a lower dopant concentration than the first region and arranged continuously with the first region in a longitudinal direction thereof; a third region, which has having a higher dopant concentration than the second region and arranged continuously with the second region in the longitudinal direction thereof; a first sidewall arranged on a side surface of the first region and including a first polycrystalline material; and a second sidewall arranged on a side surface of the third region and including a second polycrystalline material, wherein the first sidewall and the second sidewall are not arranged on a side surface of the second region. - View Dependent Claims (17, 18)
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Specification