×

Semiconductor nanowire and its manufacturing method

  • US 8,143,144 B2
  • Filed: 06/04/2008
  • Issued: 03/27/2012
  • Est. Priority Date: 06/06/2007
  • Status: Active Grant
First Claim
Patent Images

1. A method for fabricating a semiconductor nanowire that has first and second regions, the method comprising:

  • putting a catalyst particle on a substrate;

    growing the first region from the catalyst particle with a vapor-liquid-solid phase (VLS) grower;

    forming a protective coating on a sidewall of the first region; and

    growing the second region extending from the first region with the VLS grower.

View all claims
  • 5 Assignments
Timeline View
Assignment View
    ×
    ×