×

Method and arrangement for producing an N-semiconductive indium sulfide thin layer

  • US 8,143,145 B2
  • Filed: 03/14/2009
  • Issued: 03/27/2012
  • Est. Priority Date: 04/01/2008
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method of producing an n-type semiconductive indium sulfide thin film on a substrate using an indium-containing precursor, hydrogen sulfide as a reactive gaseous precursor, and an inert carrier gas stream, the method being carried out at atmospheric pressure and comprising:

  • a) converting the indium-containing precursor to at least one of a dissolved and a gaseous phase,heating the substrate to a temperature in a range of 100°

    C. to 275°

    C., anddirecting the converted indium containing precursor onto the substrate and supplying hydrogen sulfide to the indium-containing precursor in an amount so as to provide an absolute concentration of hydrogen sulfide that is greater than zero and no greater than 1% by volume in a mixing zone,wherein the indium concentration of the indium-containing precursor is set so as to produce a compact In((OH)x,Xy,Sz)3 film, where X=halide and x+y+2z=1 with z≠

    0,b) setting a temperature of the substrate in a range of 18°

    C. and 450°

    C., anddirecting onto the substrate hydrogen sulfide in an absolute concentration up to 100%; and

    cyclically repeating steps a) and b) so as to produce an indium sulfide thin film of a desired thickness.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×