Resistive material for bolometer, bolometer for infrared detector using the material, and method of manufacturing the bolometer

• US 8,143,579 B2
• Filed: 08/19/2010
• Issued: 03/27/2012
• Est. Priority Date: 09/02/2009
• Status: Active Grant

• Current Assignee: Electronics and Telecommunications Research Institute
• Original Assignee: Electronics and Telecommunications Research Institute
• Inventors: Yang, Woo Seok, Cheon, Sang Hoon, Cho, Seong Mok, Ryu, Ho Jun, Choi, Chang Auck
• Primary Examiner(s): Kim, Kiho
• Application Number:
  US12/859,466
• Publication Number:
  US 20110049366A1
• Time in Patent Office: 586 Days
• Field of Search: 250330-335, 2503361-3362, 2503381-3385, 25033901-33915, 250/340, 2503411-3418
• US Class Current: 250/338.4
• CPC Class Codes: G01J 5/04 Casings
• CPC Class Codes: G01J 5/046 Materials; Selection of thermal materials

Abstract

A resistive material for a bolometer, a bolometer for an infrared detector using the material, and a method of manufacturing the bolometer are provided. In the resistive material, at least one element selected from the group consisting of nitrogen (N), oxygen (O) and germanium (Ge) is included in antimony (Sb). The resistive material has superior properties such as high temperature coefficient of resistance (TCR), low resistivity, a low noise constant, and is easily formed in a thin film structure by sputtering typically used in a complementary metal-oxide semiconductor (CMOS) process, so that it can be used as a resistor for the bolometer for an uncooled infrared detector, and thus provide the infrared detector with superior temperature precision.

Claims

1. A resistive material for a bolometer, in which at least one element selected from the group consisting of nitrogen (N), oxygen (O) and germanium (Ge) is included in antimony (Sb), and Sb is included at a concentration of 20 at. % or more.

2. The resistive material of claim 1, wherein the resistive material includes antimony nitride having a composition of SbNx (0.03≦

x≦

0.25).

3. The resistive material of claim 1, wherein the resistive material includes antimony oxide having a composition of SbOy (0.02≦

y≦

0.15).

4. The resistive material of claim 1, wherein the resistive material includes antimony oxynitride having a composition of SbNxOy (0.02≦

x+y≦

0.25).

5. The resistive material of claim 1, wherein the resistive material includes germanium antimony having a composition of GexSb (0.1≦

x≦

0.8).

6. The resistive material of claim 1, further comprising a transition metal at 30 at % or less.

7. The resistive material of claim 6, wherein the transition metal includes at least one selected from the group consisting of titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), iron (Fe), and cobalt (Co).

8. The resistive material of claim 1, wherein the resistive material further includes at least one material selected from the group consisting of antimony nitride having a composition of SbNx (0.03≦

x≦

0.25), antimony oxide having a composition of SbOy (0.02≦

y≦

0.15), antimony oxynitride having a composition of SbNxOy (0.02≦

x+y≦

0.25), and a transition metal at 30 at % or less.

9. The bolometer of claim 1, wherein the resistor further includes at least one material selected from the group consisting of antimony nitride having a composition of SbNx (0.03≦

x≦

0.25), antimony oxide having a composition of SbOy (0.02≦

y≦

0.15), antimony oxynitride having a composition of SbNxOy (0.02≦

x+y≦

0.25), and a transition metal at 30 at % or less.

10. A bolometer for an infrared detector, which comprises a resistor in which at least one element selected from the group consisting of nitrogen (N), oxygen (O) and germanium (Ge) is included in antimony (Sb), and Sb is included at a concentration of 20 at. % or more.

11. The bolometer of claim 10, wherein the resistor has a resistance of 0.1 MΩ

to 10 MΩ

, and a temperature coefficient of resistance (TCR) of 2%/K or more.

12. The bolometer of claim 10, wherein the resistor includes a thin film having a thickness of 50 nm to 100 nm.

13. The bolometer of claim 10, further comprising:

a semiconductor substrate in which a detection circuit is formed;

a reflective layer formed on a part of a surface of the semiconductor substrate;

metal pads formed on opposite sides of the reflective layer at a predetermined interval; and

a sensor structure having the resistor located at an upper portion of the semiconductor substrate and spaced apart from a surface of the reflective layer.

14. The bolometer of claim 13, wherein the sensor structure is a multiple layer having the resistor surrounded with a protection layer, and includes a body section located above the reflective layer, fixed sections mechanically and electrically connected to the metal pads outside the body section, and support arms connecting the body section with the fixed sections.

15. The bolometer of claim 13, wherein the sensor structure includes a protection layer, electrodes, and an absorbing layer formed on and under the resistor.

16. The bolometer of claim 15, wherein the protection layer is formed of silicon nitride (Si₃N₄).

17. The bolometer of claim 15, wherein the electrodes and the absorbing layer are formed of titanium nitride (TiN).

18. A method of manufacturing a bolometer for an infrared detector, the method comprising forming a resistor in which at least one element selected from the group consisting of nitrogen (N), oxygen (O) and germanium (Ge) is included in antimony (Sb), and Sb is included at a concentration of 20 at. % or more, in the shape of a thin film using sputtering.

19. The method of claim 18, further comprising:

forming a reflective layer on a part of a surface of a semiconductor substrate in which a detection circuit is formed, and forming metal pads on opposite sides of the reflective layer at a predetermined interval;

forming a sacrificial layer on a front surface of the semiconductor substrate, which includes the reflective layer and the metal pads, to a predetermined thickness;

forming a sensor structure having the resistor on the sacrificial layer; and

removing the sacrificial layer.

20. The method of claim 18, wherein the sputtering is reactive sputtering applying direct current (DC) or radio frequency (RF) power or co-sputtering using an independent target.