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Monolithic microwave integrated circuit with diamond layer

  • US 8,143,654 B1
  • Filed: 01/16/2008
  • Issued: 03/27/2012
  • Est. Priority Date: 01/16/2008
  • Status: Active Grant
First Claim
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1. A monolithic microwave integrated circuit (MMIC) comprising:

  • a substrate including a diamond layer having a thickness of approximately 25 micrometers or less;

    an active layer coupled to the substrate, the active layer having a first side adjacent to the substrate and a second side;

    a plurality of transistors disposed at the second side of the active layer;

    a dielectric polymer layer coupled to the second side of the active layer and encompassing the plurality of transistors;

    a transmission line coupled to a top surface of the dielectric polymer layer and electrically coupled to a first transistor of the plurality of transistors by a via through the dielectric polymer layer; and

    a ground plane corresponding to the transmission line and electrically coupled to the plurality of transistors by one or more vias through the substrate and the active layer.

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