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In-situ formed capping layer in MTJ devices

  • US 8,143,683 B2
  • Filed: 04/08/2010
  • Issued: 03/27/2012
  • Est. Priority Date: 02/18/2008
  • Status: Active Grant
First Claim
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1. A device comprising:

  • a magnetic tunnel junction (MTJ) cell comprising;

    a pinning layer;

    a tunnel barrier layer; and

    a free layer; and

    a dielectric capping layer on sidewalls of the MTJ cell comprising sidewalls of the pinning layer, the tunnel barrier layer, and the free layer, wherein the dielectric capping layer has a non-neutral stress, and wherein the dielectric capping layer is a composite layer comprising more than one layer formed of different materials.

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