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Lateral growth method for defect reduction of semipolar nitride films

  • US 8,148,244 B2
  • Filed: 07/13/2006
  • Issued: 04/03/2012
  • Est. Priority Date: 07/13/2005
  • Status: Active Grant
First Claim
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1. A method of defect reduction for a semipolar nitride film, comprising:

  • performing a lateral growth of a semipolar nitride over a mask or gaps on or above a top surface of a substrate, to reduce defect density in the semipolar nitride, resulting in the semipolar nitride film having less than 2 ×

    109 cm

    2
    threading dislocations and a top surface of the semipolar nitride film that is a semipolar plane, wherein the top surface of the semipolar nitride film is planar and parallel to the top surface of the substrate.

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