Method for manufacturing semiconductor device

• US 8,148,259 B2
• Filed: 08/23/2007
• Issued: 04/03/2012
• Est. Priority Date: 08/30/2006
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Arai, Yasuyuki, Tanaka, Koichiro, Suzuki, Yukie
• Primary Examiner(s): MITCHELL, JAMES M
• Application Number:
  US11/843,745
• Publication Number:
  US 20080057632A1
• Time in Patent Office: 1,685 Days
• Field of Search: 438/622, 438/637, 438/638
• US Class Current: 438/637
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask

Abstract

The present invention offers a method for forming an opening portion by a simple process without using a photomask or a resist. Further, the present invention proposes a method for manufacturing a semiconductor device at low cost. A plurality of light absorbing layers is formed over a substrate, an interlayer insulating layer is formed over the plurality of light absorbing layers, the plurality of light absorbing layers is irradiated with a linear or rectangular laser beam from the interlayer insulating layer side, and at least the interlayer insulating layer which is over the plurality of light absorbing layers is removed and an opening portion is formed; and accordingly, a plurality of opening portions can be formed by removing the plurality of light absorbing layers and an insulating film formed over the plurality of light absorbing layers.

Claims

1. A method for manufacturing a semiconductor device comprising:

forming a first layer over a substrate;

forming a plurality of light absorbing layers over the first layer;

forming a layer having a light-transmitting property over the first layer and the plurality of light absorbing layers; and

irradiating the plurality of light absorbing layers with a linear laser beam so that the plurality of light absorbing layers are sublimated to be scattered by an energy of the linear laser beam and so that a part of the layer having a light-transmitting property overlapping with the plurality of light absorbing layers is removed,

wherein an opening portion exposing the first layer is formed in the part of the layer having a light-transmitting property, and

wherein the first layer is a semiconductor layer or a conductive layer.

2. A method for manufacturing a semiconductor device according to claim 1, wherein a second layer in contact with the first layer is formed after the first layer is exposed.

3. The method for manufacturing a semiconductor device according to claim 1, wherein the layer having a light-transmitting property is an insulating layer.

4. A method for manufacturing a semiconductor device comprising:

forming a first layer over a substrate;

forming a plurality of light absorbing layers over the first layer;

forming a second conductive layer having a light-transmitting property over the first layer;

forming a third layer having a light-transmitting property over the plurality of light absorbing layers and the second conductive layer having a light-transmitting property; and

irradiating the plurality of light absorbing layers and the second conductive layer having a light-transmitting property with a linear laser beam so that the plurality of light absorbing layers are sublimated to be scattered by an energy of the linear laser beam and so that a part of the third layer having a light-transmitting property overlapping with the plurality of light absorbing layers is removed,

wherein an opening portion exposing the first layer is formed in the part of the third layer having a light-transmitting property, and

wherein the first layer is a semiconductor layer or a conductive layer.

5. A method for manufacturing a semiconductor device according to claim 4, wherein a second layer in contact with the first layer is formed after the first layer is exposed.

6. A method for manufacturing a semiconductor device according to claim 4, wherein the third layer having a light-transmitting property is an insulating layer.

7. A method for manufacturing a semiconductor device comprising:

forming a first layer over a substrate;

forming a plurality of light absorbing layers over the first layer;

forming a second conductive layer having a light-transmitting property which extends in a first direction over the first layer;

forming a third layer having a light-transmitting property over the plurality of light absorbing layers and the second conductive layer having a light-transmitting property; and

irradiating a region, in which the plurality of light absorbing layers is formed, with a linear laser beam in a direction intersecting with the first direction so that the plurality of light absorbing layers are sublimated to be scattered by an energy of the linear laser beam and so that a part of the third layer having a light-transmitting property overlapping with the plurality of light absorbing layers is removed,

wherein an opening portion exposing the first layer is formed in the part of the third layer having a light-transmitting property, and

wherein the first layer is a semiconductor layer or a conductive layer.

8. A method for manufacturing a semiconductor device according to claim 7, wherein a second layer in contact with the first layer is formed after the first layer is exposed.

9. A method for manufacturing a semiconductor device according to claim 7, wherein the third layer having a light-transmitting property is an insulating layer.