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Method for manufacturing semiconductor device

  • US 8,148,259 B2
  • Filed: 08/23/2007
  • Issued: 04/03/2012
  • Est. Priority Date: 08/30/2006
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device comprising:

  • forming a first layer over a substrate;

    forming a plurality of light absorbing layers over the first layer;

    forming a layer having a light-transmitting property over the first layer and the plurality of light absorbing layers; and

    irradiating the plurality of light absorbing layers with a linear laser beam so that the plurality of light absorbing layers are sublimated to be scattered by an energy of the linear laser beam and so that a part of the layer having a light-transmitting property overlapping with the plurality of light absorbing layers is removed,wherein an opening portion exposing the first layer is formed in the part of the layer having a light-transmitting property, andwherein the first layer is a semiconductor layer or a conductive layer.

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