Bottom gate type thin film transistor, method of manufacturing the same, and display apparatus
First Claim
1. A bottom gate type thin film transistor, comprising on a substrate:
- a gate electrode;
a first insulating film as a gate insulating film;
an oxide semiconductor layer as a channel layer;
a second insulating film as a protective layer;
a source electrode; and
a drain electrode,wherein the oxide semiconductor layer comprises an oxide including at least one of In, Zn, and Sn,wherein the second insulating film is formed using an oxide including at least one of Si and Al as a sputtering target, and a sputtering gas with an oxygen concentration of 10 vol % or more and 50 vol % or less; and
wherein the second insulating film is formed so as to contain therein 3.8×
1019 molecules/cm3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.
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Accused Products
Abstract
Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film (5) as a protective layer, a source electrode (6), and a drain electrode (7), in which the oxide semiconductor layer (4) includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film (5) includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer (4) and contains therein 3.8×1019 molecules/cm3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.
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Citations
10 Claims
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1. A bottom gate type thin film transistor, comprising on a substrate:
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a gate electrode; a first insulating film as a gate insulating film; an oxide semiconductor layer as a channel layer; a second insulating film as a protective layer; a source electrode; and a drain electrode, wherein the oxide semiconductor layer comprises an oxide including at least one of In, Zn, and Sn, wherein the second insulating film is formed using an oxide including at least one of Si and Al as a sputtering target, and a sputtering gas with an oxygen concentration of 10 vol % or more and 50 vol % or less; and wherein the second insulating film is formed so as to contain therein 3.8×
1019 molecules/cm3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of manufacturing a bottom gate type thin film transistor, the transistor comprising on a substrate a gate electrode, a first insulating film as a gate insulating film, an oxide semiconductor layer as a channel layer, a second insulating film as a protective layer, a source electrode, and a drain electrode, the method comprising the steps of:
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forming the gate electrode on the substrate; forming the first insulating film and the oxide semiconductor layer in the stated order; patterning the first insulating film and the oxide semiconductor layer; forming the second insulating film by sputtering in an atmosphere including an oxidizing gas; patterning the second insulating film so as to cover at least a part of a channel region of the oxide semiconductor layer; forming the source electrode and the drain electrode; and patterning the source electrode and the drain electrode using the second insulating film as an etching stopper, wherein the step of forming the second insulating film uses an oxide including at least one of Si and Al as a sputtering target, and a sputtering gas with an oxygen concentration of 10 vol % or more and 50 vol % or less; and wherein the second insulating film is formed so as to contain therein 3.8×
1019 molecules/cm3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry. - View Dependent Claims (9, 10)
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Specification