Vertical LED with current guiding structure
First Claim
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1. A light-emitting diode (LED), comprising:
- a metal substrate;
an LED stack for emitting light disposed above the metal substrate, wherein the LED stack comprises;
a p-type semiconductor layer; and
an n-type semiconductor layer disposed above the p-type semiconductor layer, wherein the LED stack provides a first current path for the LED; and
a second current path for the LED different from the first current path.
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Abstract
Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.
39 Citations
21 Claims
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1. A light-emitting diode (LED), comprising:
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a metal substrate; an LED stack for emitting light disposed above the metal substrate, wherein the LED stack comprises; a p-type semiconductor layer; and an n-type semiconductor layer disposed above the p-type semiconductor layer, wherein the LED stack provides a first current path for the LED; and a second current path for the LED different from the first current path. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification