Polychromatic LED's and related semiconductor devices
First Claim
1. A semiconductor device comprising a first potential well located within a pn junction that emits light at a first wavelength when the pn junction is biased, a second potential well that emits light at a second wavelength in response to an absorption of at least a portion of light at the first wavelength, a third potential well that emits light at a third wavelength in response to an absorption of at least a portion of light at the first wavelength, and a plurality of n-doped support layers positioned proximate the second and third potential wells, wherein said first potential well comprises a III-V compound and said second and third potential wells comprise II-VI compounds.
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Abstract
A semiconductor device is provided comprising a first potential well located within a pn junction and a second potential well not located within a pn junction. The potential wells may be quantum wells. The semiconductor device is typically an LED, and may be a white or near-white light LED. The semiconductor device may additionally comprise a third potential well not located within a pn junction. The semiconductor device may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the second or third quantum wells. In addition, graphic display devices and illumination devices comprising the semiconductor device according to the present invention are provided.
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5 Claims
- 1. A semiconductor device comprising a first potential well located within a pn junction that emits light at a first wavelength when the pn junction is biased, a second potential well that emits light at a second wavelength in response to an absorption of at least a portion of light at the first wavelength, a third potential well that emits light at a third wavelength in response to an absorption of at least a portion of light at the first wavelength, and a plurality of n-doped support layers positioned proximate the second and third potential wells, wherein said first potential well comprises a III-V compound and said second and third potential wells comprise II-VI compounds.
Specification