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Polychromatic LED's and related semiconductor devices

  • US 8,148,741 B2
  • Filed: 05/17/2010
  • Issued: 04/03/2012
  • Est. Priority Date: 12/09/2004
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising a first potential well located within a pn junction that emits light at a first wavelength when the pn junction is biased, a second potential well that emits light at a second wavelength in response to an absorption of at least a portion of light at the first wavelength, a third potential well that emits light at a third wavelength in response to an absorption of at least a portion of light at the first wavelength, and a plurality of n-doped support layers positioned proximate the second and third potential wells, wherein said first potential well comprises a III-V compound and said second and third potential wells comprise II-VI compounds.

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