Recessed channel array transistor (RCAT) structures
First Claim
1. An apparatus, comprising:
- a semiconductor substrate;
a first fin coupled with the semiconductor substrate, the first fin comprising a first source region and a first drain region;
a first gate structure of a recessed channel array transistor (RCAT) formed in a first gate region disposed between the first source region and the first drain region;
a second fin coupled with the semiconductor substrate, the second fin comprising a second source region, a second drain region, and a second gate region wherein the second gate region is disposed between the second source region and the second drain region; and
a second gate structure of a multi-gate transistor formed on the second gate region of the second fin wherein the multi-gate transistor comprises a logic device and wherein the RCAT comprises a memory device.
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Abstract
Recessed channel array transistor (RCAT) structures and method of formation are generally described. In one example, an electronic device includes a semiconductor substrate, a first fin coupled with the semiconductor substrate, the first fin comprising a first source region and a first drain region, and a first gate structure of a recessed channel array transistor (RCAT) formed in a first gate region disposed between the first source region and the first drain region, wherein the first gate structure is formed by removing a sacrificial gate structure to expose the first fin in the first gate region, recessing a channel structure into the first fin, and forming the first gate structure on the recessed channel structure.
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Citations
14 Claims
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1. An apparatus, comprising:
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a semiconductor substrate; a first fin coupled with the semiconductor substrate, the first fin comprising a first source region and a first drain region; a first gate structure of a recessed channel array transistor (RCAT) formed in a first gate region disposed between the first source region and the first drain region; a second fin coupled with the semiconductor substrate, the second fin comprising a second source region, a second drain region, and a second gate region wherein the second gate region is disposed between the second source region and the second drain region; and a second gate structure of a multi-gate transistor formed on the second gate region of the second fin wherein the multi-gate transistor comprises a logic device and wherein the RCAT comprises a memory device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification