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Recessed channel array transistor (RCAT) structures

  • US 8,148,772 B2
  • Filed: 01/31/2011
  • Issued: 04/03/2012
  • Est. Priority Date: 05/30/2008
  • Status: Expired due to Fees
First Claim
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1. An apparatus, comprising:

  • a semiconductor substrate;

    a first fin coupled with the semiconductor substrate, the first fin comprising a first source region and a first drain region;

    a first gate structure of a recessed channel array transistor (RCAT) formed in a first gate region disposed between the first source region and the first drain region;

    a second fin coupled with the semiconductor substrate, the second fin comprising a second source region, a second drain region, and a second gate region wherein the second gate region is disposed between the second source region and the second drain region; and

    a second gate structure of a multi-gate transistor formed on the second gate region of the second fin wherein the multi-gate transistor comprises a logic device and wherein the RCAT comprises a memory device.

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