Method and structures of monolithically integrated ESD suppression device
First Claim
1. An electrostatic discharge device for an integrated circuit, the device comprising:
- a semiconductor substrate;
a voltage discharge region overlying an inner portion of the semiconductor substrate, the voltage discharged region comprising;
a plurality of conductive regions arranged as an array, the array being numbered from 1 through N in a first direction and the array being numbered from 1 through M in a second direction;
a dielectric material provided spatially around each of the conductive regions to form a thickness of material having a surface region;
an input region coupled to a first region of the plurality of conductive regions;
an output region coupled to a second region of the plurality of conductive regions;
an input line provided overlying a first region of the semiconductor substrate region and coupled to the input region of the plurality of conductive regions; and
an output line provided overlying a second region of the semiconductor substrate region and coupled to the output region of the plurality of conductive regions.
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Abstract
This present invention relates in general to protection of integrated circuit chips, and more particularly, to a micromachined suppression device for protecting integrated circuit chips from electrostatic discharges. The proposed ESD suppression device consists of conductive pillars are dispersed in a dielectric material. The gaps between each pillar behave like spark gaps when a high voltage ESD pulse occurs. When the voltage of the pulse reaches the “trigger voltage” these gaps spark over, creating a very low resistance path. In normal operation, the leakage current and the capacitance is very low, due to the physical gaps between the conductive pillars. The proposed ESD suppression device is fabricated using micromachining techniques to be on-chip with device ICs.
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Citations
18 Claims
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1. An electrostatic discharge device for an integrated circuit, the device comprising:
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a semiconductor substrate; a voltage discharge region overlying an inner portion of the semiconductor substrate, the voltage discharged region comprising; a plurality of conductive regions arranged as an array, the array being numbered from 1 through N in a first direction and the array being numbered from 1 through M in a second direction; a dielectric material provided spatially around each of the conductive regions to form a thickness of material having a surface region; an input region coupled to a first region of the plurality of conductive regions; an output region coupled to a second region of the plurality of conductive regions; an input line provided overlying a first region of the semiconductor substrate region and coupled to the input region of the plurality of conductive regions; and an output line provided overlying a second region of the semiconductor substrate region and coupled to the output region of the plurality of conductive regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification