Semiconductor device and method for manufacturing the same

• US 8,148,818 B2
• Filed: 05/19/2009
• Issued: 04/03/2012
• Est. Priority Date: 05/23/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Oikawa, Yoshiaki, Shoji, Hironobu, Shionoiri, Yutaka, Kato, Kiyoshi, Nakada, Masataka
• Primary Examiner(s): Richards, N Drew
• Assistant Examiner(s): DIALLO, MAMADOU L
• Application Number:
  US12/468,280
• Publication Number:
  US 20090289340A1
• Time in Patent Office: 1,050 Days
• Field of Search: 257/679, 257/E21.502, 257/E23.18
• US Class Current: 257/729
• CPC Class Codes: G06K 19/07735 the record carrier comprising means for protecting against electrostatic discharge
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01Q 1/2225 used in active tags, i.e. provided with its own power source or in passive tags, i.e. deriving power from RF signal
• CPC Class Codes: H01Q 1/2283 mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
• CPC Class Codes: H01Q 1/526 Electromagnetic shields
• CPC Class Codes: H01Q 7/00 Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop

Abstract

A conductive shield covering a semiconductor integrated circuit prevents electrostatic breakdown of the semiconductor integrated circuit (e.g., malfunction of a circuit and damage to a semiconductor element) due to electrostatic discharge. Further, with use of a pair of insulators between which the semiconductor integrated circuit is sandwiched, a highly reliable semiconductor having resistance can be provided while achieving reduction in the thickness and size. Moreover, also in the manufacturing process, external stress, or defective shapes or deterioration in characteristics resulted from electrostatic discharge are prevented, and thus the semiconductor device can be manufactured with high yield.

Claims

1. A semiconductor device comprising:

a first insulator and a second insulator provided so as to face each other;

a semiconductor integrated circuit and an antenna provided over the semiconductor integrated circuit sealed by the first insulator and the second insulator; and

a conductive material covering an outer surface of the first insulator and an outer surface of the second insulator,

wherein at least one of the first insulator and the second insulator comprises a fibrous body and an organic resin.

5. The semiconductor device according to claim 1 or 2, wherein the conductive material has a single-layer structure or a stacked-layer structure.

6. The semiconductor device according to claim 1 or 2, wherein the conductive material is a metal film.

7. The semiconductor device according to claim 6, wherein the metal film is a titanium film with a thickness of greater than or equal to 5 nm and less than or equal to 100 nm.

8. The semiconductor device according to claim 1 or 2, wherein the conductive material is a metal oxide film.

9. The semiconductor device according to claim 8, wherein the metal oxide film is an indium tin oxide film containing silicon oxide with a thickness of greater than or equal to 5 nm and less than or equal to 100 nm.

10. The semiconductor device according to claim 1 or 2, wherein the conductive material comprises a semiconductor film or a metal nitride film.

11. The semiconductor device according to claim 1 or 2, wherein at least one of the first insulator and the second insulator has a thickness of greater than or equal to 5 μ

m and less than or equal to 50 μ

m.

12. The semiconductor device according to claim 1 or 2, wherein the at least one of the first insulator and the second insulator has a structure body in which the fibrous body is impregnated with the organic resin.

13. The semiconductor device according to claim 1 or 2, wherein the conductive material functions as shields.

14. The semiconductor device according to claim 1 or 2, wherein the conductive material transmits electromagnetic waves and blocks static electricity.

15. The semiconductor device according to claim 1, wherein the antenna and the semiconductor integrated circuit interposed between the first insulator and the second insulator are surrounded by the conductive material entirely.

2. A semiconductor device comprising:

a first insulator and a second insulator provided so as to face each other;

a semiconductor integrated circuit and a first antenna provided over the semiconductor integrated circuit sealed by the first insulator and the second insulator;

a conductive material covering an outer surface of the first insulator and an outer surface of the second insulator; and

a second antenna electromagnetically connected to the first antenna,

wherein at least one of the first insulator and the second insulator comprises a fibrous body and an organic resin.

3. The semiconductor device according to claim 2, wherein the semiconductor integrated circuit performs wireless communication with the outside through the second antenna.

4. The semiconductor device according to claim 2,

wherein the second antenna is provided over a substrate,

wherein an insulating film is formed over the second antenna, and

wherein the semiconductor integrated circuit and the first antenna sealed by the first insulator and the second insulator and covered with the conductive material are provided over the insulating film.

16. The semiconductor device according to claim 2, wherein the first antenna and the semiconductor integrated circuit interposed between the first insulator and the second insulator are entirely surrounded by the conductive material.

17. A semiconductor device comprising:

a first insulator and a second insulator provided so as to face each other wherein the first insulator has a first surface facing the second insulator and a second surface facing in an opposite direction from the first surface and wherein the second insulator has a third surface facing to the first insulator and a fourth surface facing an opposite direction from the third surface;

a semiconductor integrated circuit between the first insulator and the second insulator;

an antenna between the semiconductor integrated circuit and the first insulator;

a first conductive layer in contact with the second surface of the first insulator; and

a second conductive layer in contact with the fourth surface of the second insulator,

wherein at least of one of the first conductive layer and the second conductive layer is in contact with a side surface of the first insulator and a side surface of the second insulator, and

wherein the side surface of the first insulator is coplanar with the side surface of the second insulator.

21. The semiconductor device according to claim 17 or 18, wherein at least one of the first conductive layer and the second conductive layer has a stacked-layer structure.

22. The semiconductor device according to claim 17 or 18, wherein at least one of the first conductive layer and the second conductive layer comprises a metal film.

23. The semiconductor device according to claim 22, wherein the metal film is a titanium film with a thickness of greater than or equal to 5 nm and less than or equal to 100 nm.

24. The semiconductor device according to claim 17 or 18, wherein at least one of the first conductive layer and the second conductive layer comprises a metal oxide film.

25. The semiconductor device according to claim 24, wherein the metal oxide film is an indium tin oxide film containing silicon oxide with a thickness of greater than or equal to 5 nm and less than or equal to 100 nm.

26. The semiconductor device according to claim 17 or 18, wherein at least one of the first conductive layer and the second conductive layer comprises a semiconductor film or a metal nitride film.

27. The semiconductor device according to claim 17 or 18, wherein at least one of the first insulator and the second insulator has a thickness of greater than or equal to 5 μ

m and less than or equal to 50 μ

m.

28. The semiconductor device according to claim 17 or 18, wherein at least one of the first insulator and the second insulator comprises a fibrous body and an organic resin.

29. The semiconductor device according to claim 17 or 18, wherein at least one of the first insulator and the second insulator has a structure body in which a fibrous body is impregnated with an organic resin.

30. The semiconductor device according to claim 17 or 18, wherein the first conductive layer and the second conductive layer function as shields.

31. The semiconductor device according to claim 17 or 18, wherein the first conductive layer and the second conductive layer transmit electromagnetic waves and block static electricity.

32. The semiconductor device according to claim 17, wherein the antenna and the semiconductor integrated circuit interposed between the first insulator and the second insulator are entirely surrounded by the first conductive layer and the second conductive layer.

18. A semiconductor device comprising:

a first insulator and a second insulator provided so as to face each other wherein the first insulator has a first surface facing the second insulator and a second surface facing in an opposite direction from the first surface and wherein the second insulator has a third surface facing the first insulator and a fourth surface facing an opposite direction from the third surface;

a semiconductor integrated circuit between the first insulator and the second insulator;

a first antenna between the semiconductor integrated circuit and the first insulator;

a first conductive layer in contact with the second surface of the first insulator;

a second conductive layer in contact with the fourth surface of the second insulator; and

a second antenna electromagnetically connected to the first antenna,

wherein at least of one of the first conductive layer and the second conductive layer is in contact with a side surface of the first insulator and a side surface of the second insulator, and

wherein the side surface of the first insulator is coplanar with the side surface of the second insulator.

19. The semiconductor device according to claim 18, wherein the semiconductor integrated circuit performs wireless communication with the outside through the second antenna.

20. The semiconductor device according to claim 18,

wherein the second antenna is provided over a substrate,

wherein an insulating film is formed over the second antenna, and

wherein the semiconductor integrated circuit and the first antenna interposed between the first insulator and the second insulator and covered with the first conductive layer and the second conductive layer is provided over the insulating film.

33. The semiconductor device according to claim 18, wherein the first antenna and the semiconductor integrated circuit interposed between the first insulator and the second insulator are entirely surrounded by the first conductive layer and the second conductive layer.