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Flash memory device having dummy cell

  • US 8,149,620 B2
  • Filed: 03/02/2009
  • Issued: 04/03/2012
  • Est. Priority Date: 01/09/2006
  • Status: Active Grant
First Claim
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1. A nonvolatile semiconductor memory device, comprising:

  • a cell array including a plurality of blocks each of which is formed of a plurality of strings, each string including a plurality of memory cells assigned by an external address and connected to corresponding word lines and at least one memory cell not assigned by the external address and connected to a dummy word line;

    a storage device configured to store position data that selects the at least one memory cell;

    a pre-decoder configured to translate the external address to an internal address in response to the position data;

    a decoder configured to supply word line voltages to the word lines in response to the internal address and a control signal;

    a control unit configured to generate the control signal in response to the position data,wherein the control unit controls a driver so that the at least one memory cell connected to the dummy word line is programmed to a predetermined state after an erase operation.

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