Baffle plate and substrate processing apparatus

• US 8,152,925 B2
• Filed: 06/12/2009
• Issued: 04/10/2012
• Est. Priority Date: 06/23/2008
• Status: Expired due to Fees

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Iizuka, Hachishiro
• Primary Examiner(s): Zervigon, Rudy
• Application Number:
  US12/483,545
• Publication Number:
  US 20090314432A1
• Time in Patent Office: 1,033 Days
• Field of Search: 118/715, 156/345.26
• US Class Current: 118/715
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/32623 Mechanical discharge control means
• CPC Class Codes: H01J 37/32633 Baffles
• CPC Class Codes: H01L 21/67069 for drying etching

Abstract

A baffle plate, provided in a processing chamber for processing a substrate therein such that the baffle plate is disposed around a mounting table for mounting the substrate thereon, has a plurality of gas exhaust holes, through which a gas is exhausted from the processing chamber. The baffle plate has a stacked structure including a plurality of plate-shaped members. The baffle plate includes a pressure adjustment gas supply passageway to supply a pressure adjustment gas for adjusting a pressure in the processing chamber.

Claims

1. A baffle plate provided in a processing chamber for processing a substrate therein such that the baffle plate is disposed around a mounting table for mounting the substrate thereon, the baffle plate having a plurality of gas exhaust holes, through which a gas is exhausted from the processing chamber,

wherein the baffle plate has a stacked structure including a plurality of plate-shaped members, and the baffle plate includes a pressure adjustment gas supply passageway to supply a pressure adjustment gas for adjusting a pressure in the processing chamber.

2. The baffle plate of claim 1, wherein the baffle plate is configured to supply the pressure adjustment gas upward from an upper side thereof.

3. The baffle plate of claim 1, wherein the baffle plate is configured to supply the pressure adjustment gas downward from a lower side thereof.

4. The baffle plate of claim 1, wherein the baffle plate is configured to supply the pressure adjustment gas into the gas exhaust holes.

5. The baffle plate of claim 1, wherein the baffle plate is configured to separately control amounts of the pressure adjustment gas to be supplied through a plurality of sections divided in a circumferential direction of the mounting table.

6. The baffle plate of claim 1, wherein argon gas or nitrogen gas is supplied as the pressure adjustment gas.

7. The baffle plate of claim 1, further comprising an electrode configured to supply a radio frequency power or configured to have a predetermined electric potential.

8. The baffle plate of claim 1, further comprising a temperature control mechanism.

9. A substrate processing apparatus comprising:

a processing chamber in which a substrate is processed;

a mounting table disposed in the processing chamber to mount the substrate thereon;

a processing gas supply mechanism configured to supply a processing gas into the processing chamber; and

a baffle plate disposed around the mounting table, the baffle plate having a plurality of gas exhaust holes, through which a gas is exhausted from the processing chamber, wherein the baffle plate has a stacked structure including a plurality of plate-shaped members, and the baffle plate includes a pressure adjustment gas supply passageway to supply a pressure adjustment gas for adjusting a pressure in the processing chamber.

10. The apparatus of claim 9, wherein the baffle plate is configured to supply the pressure adjustment gas upward from an upper side thereof.

11. The apparatus of claim 9, wherein the baffle plate is configured to supply the pressure adjustment gas downward from a lower side thereof.

12. The apparatus of claim 9, wherein the baffle plate is configured to supply the pressure adjustment gas into the gas exhaust holes.

13. The apparatus of claim 9, wherein the apparatus is configured to separately control amounts of the pressure adjustment gas to be supplied through a plurality of sections divided in a circumferential direction of the mounting table.

14. The apparatus of claim 9, wherein argon gas or nitrogen gas is supplied as the pressure adjustment gas.

15. The apparatus of claim 9, wherein the baffle plate further includes an electrode configured to supply a radio frequency power or configured to have a predetermined electric potential.

16. The apparatus of claim 9, wherein the baffle plate further includes a temperature control mechanism.

17. The apparatus of claim 9, wherein the substrate is plasma etched.