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In-Ga-Zn-Sn type oxide sinter and target for physical film deposition

  • US 8,153,031 B2
  • Filed: 11/30/2007
  • Issued: 04/10/2012
  • Est. Priority Date: 05/11/2007
  • Status: Active Grant
First Claim
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1. An oxide sintered body comprising an indium element (In), a gallium element (Ga), a zinc element (Zn) and a tin element (Sn), and comprising a compound shown by Ga2In6Sn2O16 or (Ga,In)2O3.

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