Method of making a semiconductor chip assembly with a post/dielectric/post heat spreader

• US 8,153,477 B2
• Filed: 07/30/2011
• Issued: 04/10/2012
• Est. Priority Date: 03/25/2008
• Status: Active Grant

• Current Assignee: Bridge Semiconductor Corporation
• Original Assignee: Bridge Semiconductor Corporation
• Inventors: Lin, Charles W. C., Wang, Chia-Chung
• Primary Examiner(s): Wagner, Jenny L
• Assistant Examiner(s): BOYLE, ABBIGALE A
• Application Number:
  US13/194,909
• Publication Number:
  US 20110287563A1
• Time in Patent Office: 255 Days
• Field of Search: 438/122, 438/26, 438/27, 438/118, 257/711, 257/709, 257/717, 257/720, 257/707, 257/703, 257/704, 257/705, 257/E23.102, 257/E23.104
• US Class Current: 438/122
• CPC Class Codes: H01L 21/486 Via connections through the substrate with or without pins
• CPC Class Codes: H01L 2224/29111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/2929 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29339 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/32188 the layer connector connecting to a bonding area protruding from the surface of the item
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48106 the connector being orthogonal to a side surface of the semiconductor or solid-state body, e.g. parallel layout
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48639 Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/83855 Hardening the adhesive by curing, i.e. thermosetting
• CPC Class Codes: H01L 2224/85207 Thermosonic bonding
• CPC Class Codes: H01L 2224/85439 Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/92 Specific sequence of method steps
• CPC Class Codes: H01L 2224/92247 the second connecting process involving a wire connector
• CPC Class Codes: H01L 23/3677 Wire-like or pin-like cooling fins or heat sinks
• CPC Class Codes: H01L 24/29 of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01007 : Nitrogen [N]
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01026 : Iron [Fe]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01031 : Gallium [Ga]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/0104 : Zirconium [Zr]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01058 : Cerium [Ce]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01087 : Francium [Fr]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/0134 : Quaternary Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: H01L 33/483 : Containers
• CPC Class Codes: H01L 33/642 : characterized by the shape
• CPC Class Codes: H05K 1/0204 : using means for thermal conduction connection in the thickness direction of the substrate H05K1/0207 takes precedence
• CPC Class Codes: H05K 2201/09054 : Raised area or protrusion of metal substrate
• CPC Class Codes: H05K 2201/10106 : Light emitting diode [LED]
• CPC Class Codes: H05K 2203/0369 : Etching selective parts of a metal substrate through part of its thickness, e.g. using etch resist
• CPC Class Codes: H05K 3/0061 : onto a metallic substrate, e.g. a heat sink heat sinks for electric apparatus H05K7/20

Abstract

A method of making a semiconductor chip assembly includes providing first and second posts, first and second adhesives, first and second conductive layers and a dielectric base, wherein the first post extends from the dielectric base in a first vertical direction into a first opening in the first adhesive and is aligned with a first aperture in the first conductive layer, the second post extends from the dielectric base in a second vertical direction into a second opening in the second adhesive and is aligned with a second aperture in the second conductive layer and the dielectric base is sandwiched between and extends laterally from the posts, then flowing the first adhesive in the first vertical direction and the second adhesive in the second vertical direction, solidifying the adhesives, then providing a conductive trace that includes a pad, a terminal and selected portions of the conductive layers, wherein the pad extends beyond the dielectric base in the first vertical direction and the terminal extends beyond the dielectric base in the second vertical direction, providing a heat spreader that includes the posts and the dielectric base, then mounting a semiconductor device on the first post, electrically connecting the semiconductor device to the conductive trace and thermally connecting the semiconductor device to the heat spreader.

Claims

1. A method of making a semiconductor chip assembly, comprising:

providing a first post, a second post, a first adhesive, a second adhesive, a first conductive layer, a second conductive layer and a dielectric base, wherein

the first post extends vertically from the dielectric base in a first vertical direction, extends into a first opening in the first adhesive and is aligned with a first aperture in the first conductive layer,

the second post extends vertically from the dielectric base in a second vertical direction opposite the first vertical direction, extends into a second opening in the second adhesive and is aligned with a second aperture in the second conductive layer,

the first adhesive contacts the dielectric base, is sandwiched between the dielectric base and the first conductive layer, extends vertically beyond the dielectric base in the first vertical direction and is non-solidified,

the second adhesive contacts the dielectric base, is sandwiched between the dielectric base and the second conductive layer, extends vertically beyond the dielectric base in the second vertical direction and is non-solidified,

the first conductive layer extends vertically beyond the first adhesive in the first vertical direction,

the second conductive layer extends vertically beyond the second adhesive in the second vertical direction, and

the dielectric base is a thermally conductive, electrically insulative material that contacts and is sandwiched between and thermally connects and electrically isolates and mechanically attaches the posts, covers the first post in the second vertical direction, covers the second post in the first vertical direction and extends laterally from the posts in lateral directions orthogonal to the vertical directions;

then

flowing the first adhesive in the first vertical direction into a first gap located in the first aperture between the first post and the first conductive layer;

flowing the second adhesive in the second vertical direction into a second gap located in the second aperture between the second post and the second conductive layer;

solidifying the adhesives, thereby mechanically attaching the first conductive layer to the first post and the dielectric base using the first adhesive and mechanically attaching the second conductive layer to the second post and the dielectric base using the second adhesive;

then

providing a conductive trace that includes a pad, a terminal and an electrical interconnect, wherein the pad extends vertically beyond the dielectric base in the first vertical direction and includes a selected portion of the first conductive layer, the terminal extends vertically beyond the dielectric base in the second vertical direction and includes a selected portion of the second conductive layer and the electrical interconnect extends through the dielectric base and the adhesives in an electrically conductive path between the pad and the terminal;

providing a heat spreader that includes the posts and the dielectric base;

then

mounting a semiconductor device on the first post, wherein the semiconductor device extends vertically beyond the first post in the first vertical direction and extends laterally within peripheries of the posts and the posts are electrically isolated from one another;

electrically connecting the semiconductor device to the pad, thereby electrically connecting the semiconductor device to the terminal; and

thermally connecting the semiconductor device to the first post, thereby thermally connecting the semiconductor device to the second post.

2. The method of claim 1, wherein providing the posts includes:

providing a first metal plate and a second metal plate, wherein the dielectric base contacts and is sandwiched between the metal plates;

then

forming a first etch mask on the first metal plate that selectively exposes the first metal plate in the first vertical direction and defines the first post;

forming a second etch mask on the second metal plate that selectively exposes the second metal plate in the second vertical direction and defines the second post;

then

etching the first metal plate in a first pattern defined by the first etch mask, thereby etching through the first metal plate to the dielectric base, wherein the first post includes an unetched portion of the first metal plate that protrudes beyond the dielectric base in the first vertical direction;

etching the second metal plate a second pattern defined by the second etch mask, thereby etching through the second metal plate to the dielectric base, wherein the second post includes an unetched portion of the second metal plate that protrudes beyond the dielectric base in the second vertical direction; and

then

removing the etch masks.

3. The method of claim 1, wherein:

providing the first adhesive includes providing a first prepreg with a first uncured epoxy and providing the second adhesive includes providing a second prepreg with a second uncured epoxy;

flowing the first adhesive includes melting the first uncured epoxy and compressing the first uncured epoxy and flowing the second adhesive includes melting the second uncured epoxy and compressing the second uncured epoxy; and

solidifying the first adhesive includes curing the first uncured epoxy and solidifying the second adhesive includes curing the second uncured epoxy.

4. The method of claim 1, wherein:

flowing the first adhesive includes flowing the first adhesive beyond the first post and the first conductive layer in the first vertical direction and filling the first gap with the first adhesive; and

flowing the second adhesive includes flowing the second adhesive beyond the second post and the second conductive layer in the second vertical direction and filling the second gap with the second adhesive.

5. The method of claim 1, wherein:

providing the first conductive layer includes contacting the first conductive layer and the first adhesive, wherein the first aperture extends through the first conductive layer alone, and then flowing the first adhesive into the first gap; and

providing the second conductive layer includes contacting the second conductive layer and the second adhesive, wherein the second aperture extends through the second conductive layer alone, and then flowing the second adhesive into the second gap.

6. The method of claim 1, wherein:

providing the first conductive layer includes providing a first substrate that includes the first conductive layer and a first dielectric layer and then contacting the first dielectric layer and the first adhesive, wherein the first dielectric layer contacts and is sandwiched between the first conductive layer and the first adhesive and is solidified and the first aperture extends through the first conductive layer and the first dielectric layer, and then flowing the first adhesive into the first gap; and

providing the second conductive layer includes providing a second substrate that includes the second conductive layer and a second dielectric layer and then contacting the second dielectric layer and the second adhesive, wherein the second dielectric layer contacts and is sandwiched between the second conductive layer and the second adhesive and is solidified and the second aperture extends through the second conductive layer and the second dielectric layer, and then flowing the second adhesive into the second gap.

7. The method of claim 1, wherein providing the pad includes removing selected portions of the first conductive layer after solidifying the adhesives.

8. The method of claim 1, wherein providing the pad includes:

grinding the first post, the first adhesive and the first conductive layer such that the first post, the first adhesive and the first conductive layer are laterally aligned with one another at a lateral surface that faces in the first vertical direction; and

then

removing selected portions of the first conductive layer using an etch mask that defines the pad.

9. The method of claim 1, wherein providing the terminal includes removing selected portions of the second conductive layer after solidifying the adhesives.

10. The method of claim 1, wherein providing the terminal includes:

grinding the second post, the second adhesive and the second conductive layer such that the second post, the second adhesive and the second conductive layer are laterally aligned with one another at a lateral surface that faces in the second vertical direction; and

then

removing selected portions of the second conductive layer using an etch mask that defines the terminal.

11. The method of claim 1, wherein providing the electrical interconnect includes:

providing a plated through-hole that extends through the dielectric base, the adhesives and the conductive layers after solidifying the adhesives; and

then

removing selected portions of the conductive layers.

12. The method of claim 1, wherein providing the conductive trace includes:

removing selected portions of the first conductive layer using a first etch mask that defines the pad after solidifying the adhesives; and

removing selected portions of the second conductive layer using a second etch mask that defines the terminal after solidifying the adhesives.

13. The method of claim 1, wherein providing the conductive trace includes:

providing a hole that extends through the dielectric base, the adhesives and the conductive layers after solidifying the adhesives;

then

depositing a plated metal on the posts, the adhesives and the conductive layers, wherein the plated metal forms a first plated layer that covers the first post in the first vertical direction, a second plated layer that covers the second post in the second vertical direction and the electrical interconnect as a plated through-hole in the hole;

then

forming a first etch mask on the first plated layer that defines the pad;

forming a second etch mask on the second plated layer that defines the terminal;

then

etching the first conductive layer and the first plated layer in a first pattern defined by the first etch mask;

etching the second conductive layer and the second plated layer in a second pattern defined by the second etch mask; and

then

removing the etch masks.

14. The method of claim 13, wherein the second etch mask defines a second terminal that is electrically connected to the first post and electrically isolated from the second post.

15. The method of claim 1, wherein mounting the semiconductor device includes providing a die attach between the semiconductor device and the first post, electrically connecting the semiconductor device includes providing a wire bond between the semiconductor device and the pad, and thermally connecting the semiconductor device includes providing the die attach between the semiconductor device and the first post.

16. A method of making a semiconductor chip assembly, comprising:

providing a first post, a second post, a first adhesive, a second adhesive, a first conductive layer, a second conductive layer and a dielectric base, wherein

the first post extends vertically from the dielectric base in a first vertical direction, extends into a first opening in the first adhesive and is aligned with a first aperture in the first conductive layer,

the second post extends vertically from the dielectric base in a second vertical direction opposite the first vertical direction, extends into a second opening in the second adhesive and is aligned with a second aperture in the second conductive layer,

the first adhesive contacts the dielectric base, is sandwiched between the dielectric base and the first conductive layer, extends vertically beyond the dielectric base in the first vertical direction and is non-solidified,

the second adhesive contacts the dielectric base, is sandwiched between the dielectric base and the second conductive layer, extends vertically beyond the dielectric base in the second vertical direction and is non-solidified,

the first conductive layer extends vertically beyond the first adhesive in the first vertical direction,

the second conductive layer extends vertically beyond the second adhesive in the second vertical direction, and

the dielectric base is a thermally conductive, electrically insulative material that contacts and is sandwiched between and thermally connects and electrically isolates and mechanically attaches the posts, covers the first post in the second vertical direction, covers the second post in the first vertical direction and extends laterally from the posts in lateral directions orthogonal to the vertical directions;

then

applying heat to melt the adhesives;

moving the conductive layers towards one another, thereby moving the first post in the first vertical direction in the first aperture, moving the second post in the second vertical direction in the second aperture, applying pressure to the molten first adhesive between the dielectric base and the first conductive layer and applying pressure to the molten second adhesive between the dielectric base and the second conductive layer, wherein the pressure between the dielectric base and the first conductive layer forces the molten first adhesive to flow in the first vertical direction into a first gap located in the first aperture between the first post and the first conductive layer and the pressure between the dielectric base and the second conductive layer forces the molten second adhesive to flow in the second vertical direction into a second gap located in the second aperture between the second post and the second conductive layer;

applying heat to solidify the molten adhesives, thereby mechanically attaching the first conductive layer to the first post and the dielectric base using the first adhesive and mechanically attaching the second conductive layer to the second post and the dielectric base using the second adhesive;

then

providing a conductive trace that includes a pad, a terminal and an electrical interconnect, wherein the pad extends vertically beyond the first adhesive in the first vertical direction and includes a selected portion of the first conductive layer, the terminal extends vertically beyond the second adhesive in the second vertical direction and includes a selected portion of the second conductive layer and the electrical interconnect extends through the dielectric base and the adhesives in an electrically conductive path between the pad and the terminal;

providing a heat spreader that includes the posts, the dielectric base, a first cap and a second cap, wherein the first cap is adjacent to the first post and the first adhesive, covers the first post in the first vertical direction, extends laterally from the first post, extends vertically beyond the first adhesive in the first vertical direction and includes a selected portion of the first conductive layer and the second cap is adjacent to the second post and the second adhesive, covers the second post in the second vertical direction, extends laterally from the second post, extends vertically beyond the second adhesive in the second vertical direction and includes a selected portion of the second conductive layer;

then

mounting a semiconductor device on the first cap, wherein the semiconductor device extends vertically beyond the first cap in the first vertical direction, extends laterally within peripheries of the posts and is located within peripheries of the caps, the first post is sandwiched between the first cap and the dielectric base, the second post is sandwiched between the second cap and the dielectric base, the posts are electrically isolated from one another and the caps are electrically isolated from one another;

electrically connecting the semiconductor device to the pad, thereby electrically connecting the semiconductor device to the terminal; and

thermally connecting the semiconductor device to the first cap, thereby thermally connecting the semiconductor device to the second cap.

17. The method of claim 16, wherein providing the posts includes:

providing a first metal plate and a second metal plate, wherein the dielectric base contacts and is sandwiched between the metal plates;

then

forming a first etch mask on the first metal plate that selectively exposes the first metal plate in the first vertical direction and defines the first post;

forming a second etch mask on the second metal plate that selectively exposes the second metal plate in the second vertical direction and defines the second post;

then

etching the first metal plate in a first pattern defined by the first etch mask, thereby etching through the first metal plate to the dielectric base, wherein the first post includes an unetched portion of the first metal plate that protrudes beyond the dielectric base in the first vertical direction;

etching the second metal plate a second pattern defined by the second etch mask, thereby etching through the second metal plate to the dielectric base, wherein the second post includes an unetched portion of the second metal plate that protrudes beyond the dielectric base in the second vertical direction; and

then

removing the etch masks.

18. The method of claim 16, wherein:

providing the first adhesive includes providing a first prepreg with a first uncured epoxy and providing the second adhesive includes providing a second prepreg with a second uncured epoxy;

flowing the first adhesive includes melting the first uncured epoxy and compressing the first uncured epoxy and flowing the second adhesive includes melting the second uncured epoxy and compressing the second uncured epoxy; and

solidifying the first adhesive includes curing the first uncured epoxy and solidifying the second adhesive includes curing the second uncured epoxy.

19. The method of claim 16, wherein:

flowing the first adhesive includes flowing the first adhesive beyond the first post and the first conductive layer in the first vertical direction and filling the first gap with the first adhesive; and

flowing the second adhesive includes flowing the second adhesive beyond the second post and the second conductive layer in the second vertical direction and filling the second gap with the second adhesive.

20. The method of claim 16, wherein:

providing the first conductive layer includes contacting the first conductive layer and the first adhesive, wherein the first aperture extends through the first conductive layer alone, and then flowing the first adhesive into the first gap; and

providing the second conductive layer includes contacting the second conductive layer and the second adhesive, wherein the second aperture extends through the second conductive layer alone, and then flowing the second adhesive into the second gap.

21. The method of claim 16, wherein:

providing the first conductive layer includes providing a first substrate that includes the first conductive layer and a first dielectric layer and then contacting the first dielectric layer and the first adhesive, wherein the first dielectric layer contacts and is sandwiched between the first conductive layer and the first adhesive and is solidified and the first aperture extends through the first conductive layer and the first dielectric layer, and then flowing the first adhesive into the first gap; and

providing the second conductive layer includes providing a second substrate that includes the second conductive layer and a second dielectric layer and then contacting the second dielectric layer and the second adhesive, wherein the second dielectric layer contacts and is sandwiched between the second conductive layer and the second adhesive and is solidified and the second aperture extends through the second conductive layer and the second dielectric layer, and then flowing the second adhesive into the second gap.

22. The method of claim 16, wherein providing the pad and the first cap includes removing selected portions of the first conductive layer using an etch mask that defines the pad and the first cap after solidifying the adhesives.

23. The method of claim 16, wherein providing the pad and the first cap includes:

grinding the first post, the first adhesive and the first conductive layer such that the first post, the first adhesive and the first conductive layer are laterally aligned with one another at a lateral surface that faces in the first vertical direction; and

then

removing selected portions of the first conductive layer using an etch mask that defines the pad and the first cap.

24. The method of claim 16, wherein providing the terminal and the second cap includes removing selected portions of the second conductive layer using an etch mask that defines the terminal and the second cap after solidifying the adhesives.

25. The method of claim 16, wherein providing the terminal and the second cap includes:

grinding the second post, the second adhesive and the second conductive layer such that the second post, the second adhesive and the second conductive layer are laterally aligned with one another at a lateral surface that faces in the second vertical direction; and

then

removing selected portions of the second conductive layer using an etch mask that defines the terminal and the second cap.

26. The method of claim 16, wherein providing the electrical interconnect includes providing a plated through-hole that extends through the dielectric base, the adhesives and the conductive layers after solidifying the adhesives.

27. The method of claim 16, wherein providing the conductive trace and the heat spreader includes:

removing selected portions of the first conductive layer using a first etch mask that defines the pad and the first cap after solidifying the adhesives; and

removing selected portions of the second conductive layer using a second etch mask that defines the terminal and the second cap after solidifying the adhesives.

28. The method of claim 16, wherein providing the conductive trace and the heat spreader includes:

providing a hole that extends through the dielectric base, the adhesives and the conductive layers after solidifying the adhesives;

then

depositing a plated metal on the posts, the adhesives and the conductive layers, wherein the plated metal forms a first plated layer that covers the first post in the first vertical direction, a second plated layer that covers the second post in the second vertical direction and the electrical interconnect as a plated through-hole in the hole;

then

forming a first etch mask on the first plated layer that defines the pad and the first cap;

forming a second etch mask on the second plated layer that defines the terminal and the second cap;

then

etching the first conductive layer and the first plated layer in a first pattern defined by the first etch mask;

etching the second conductive layer and the second plated layer in a second pattern defined by the second etch mask; and

then

removing the etch masks.

29. The method of claim 28, wherein the second etch mask defines a second terminal that is electrically connected to the first post and electrically isolated from the second post.

30. The method of claim 16, wherein mounting the semiconductor device includes providing a die attach between the semiconductor device and the first cap, electrically connecting the semiconductor device includes providing a wire bond between the semiconductor device and the pad, and thermally connecting the semiconductor device includes providing the die attach between the semiconductor device and the first cap.

31. A method of making a semiconductor chip assembly, comprising:

providing a first post, a second post, a first adhesive, a second adhesive, a first conductive layer, a second conductive layer and a dielectric base, wherein

the first post extends vertically from the dielectric base in a first vertical direction, extends into a first opening in the first adhesive and is aligned with a first aperture in the first conductive layer,

the second post extends vertically from the dielectric base in a second vertical direction opposite the first vertical direction, extends into a second opening in the second adhesive and is aligned with a second aperture in the second conductive layer,

the first adhesive contacts the dielectric base, is sandwiched between the dielectric base and the first conductive layer, extends vertically beyond the dielectric base in the first vertical direction and is non-solidified,

the second adhesive contacts the dielectric base, is sandwiched between the dielectric base and the second conductive layer, extends vertically beyond the dielectric base in the second vertical direction and is non-solidified,

the first conductive layer extends vertically beyond the first adhesive in the first vertical direction,

the second conductive layer extends vertically beyond the second adhesive in the second vertical direction, and

the dielectric base is a thermally conductive, electrically insulative material that contacts and is sandwiched between and thermally connects and electrically isolates and mechanically attaches the posts, covers the first post in the second vertical direction, covers the second post in the first vertical direction and extends laterally from the posts in lateral directions orthogonal to the vertical directions;

then

applying heat to melt the adhesives;

moving the conductive layers towards one another, thereby moving the first post in the first vertical direction in the first aperture, moving the second post in the second vertical direction in the second aperture, applying pressure to the molten first adhesive between the dielectric base and the first conductive layer and applying pressure to the molten second adhesive between the dielectric base and the second conductive layer, wherein the pressure between the dielectric base and the first conductive layer forces the molten first adhesive to flow in the first vertical direction into a first gap located in the first aperture between the first post and the first conductive layer and the pressure between the dielectric base and the second conductive layer forces the molten second adhesive to flow in the second vertical direction into a second gap located in the second aperture between the second post and the second conductive layer;

applying heat to solidify the molten adhesives, thereby mechanically attaching the first conductive layer to the first post and the dielectric base using the first adhesive and mechanically attaching the second conductive layer to the second post and the dielectric base using the second adhesive;

then

providing first and second plated through-holes that extend through the dielectric base, the adhesives and the conductive layers;

then

providing a conductive trace that includes a pad, a first terminal and the first plated through-hole, wherein the pad extends vertically beyond the first adhesive in the first vertical direction and includes a selected portion of the first conductive layer, the first terminal extends vertically beyond the second adhesive in the second vertical direction and includes a selected portion of the second conductive layer and the first plated through-hole is in an electrically conductive path between the pad and the first terminal;

providing a heat spreader that includes the posts, the dielectric base, a first cap and a second cap, wherein the first cap is adjacent to the first post and the first adhesive, covers the first post in the first vertical direction, extends laterally from the first post, extends vertically beyond the first adhesive in the first vertical direction and includes a selected portion of the first conductive layer, the second cap is adjacent to the second post and the second adhesive, covers the second post in the second vertical direction, extends laterally from the second post, extends vertically beyond the second adhesive in the second vertical direction and includes a selected portion of the second conductive layer and the second plated through-hole is in an electrically conductive path between the first cap and a second terminal;

providing the pad and the first cap including removing selected portions of the first conductive layer;

providing the terminals and the second cap including removing selected portions of the second conductive layer;

then

mounting a semiconductor device on the first cap, wherein the semiconductor device extends vertically beyond the first cap in the first vertical direction, extends laterally within peripheries of the posts and is located within peripheries of the caps, the first post is sandwiched between the first cap and the dielectric base, the second post is sandwiched between the second cap and the dielectric base, the posts are electrically isolated from one another, the caps are

electrically isolated from one another and the terminals are electrically isolated from one another;

electrically connecting the semiconductor device to the pad, thereby electrically connecting the semiconductor device to the first terminal;

electrically connecting the semiconductor device to the first cap, thereby electrically connecting the semiconductor device to the second terminal; and

thermally connecting the semiconductor device to the first cap, thereby thermally connecting the semiconductor device to the second cap.

32. The method of claim 31, wherein providing the posts includes:

providing a first metal plate and a second metal plate, wherein the dielectric base contacts and is sandwiched between the metal plates;

then

forming a first etch mask on the first metal plate that selectively exposes the first metal plate in the first vertical direction and defines the first post;

forming a second etch mask on the second metal plate that selectively exposes the second metal plate in the second vertical direction and defines the second post;

then

etching the first metal plate in a first pattern defined by the first etch mask, thereby etching through the first metal plate to the dielectric base, wherein the first post includes an unetched portion of the first metal plate that protrudes beyond the dielectric base in the first vertical direction;

etching the second metal plate a second pattern defined by the second etch mask, thereby etching through the second metal plate to the dielectric base, wherein the second post includes an unetched portion of the second metal plate that protrudes beyond the dielectric base in the second vertical direction; and

then

removing the etch masks.

33. The method of claim 31, wherein:

providing the first adhesive includes providing a first prepreg with a first uncured epoxy and providing the second adhesive includes providing a second prepreg with a second uncured epoxy;

flowing the first adhesive includes melting the first uncured epoxy and compressing the first uncured epoxy and flowing the second adhesive includes melting the second uncured epoxy and compressing the second uncured epoxy; and

solidifying the first adhesive includes curing the first uncured epoxy and solidifying the second adhesive includes curing the second uncured epoxy.

34. The method of claim 31, wherein:

flowing the first adhesive includes flowing the first adhesive beyond the first post and the first conductive layer in the first vertical direction and filling the first gap with the first adhesive; and

flowing the second adhesive includes flowing the second adhesive beyond the second post and the second conductive layer in the second vertical direction and filling the second gap with the second adhesive.

35. The method of claim 31, wherein:

providing the first conductive layer includes contacting the first conductive layer and the first adhesive, wherein the first aperture extends through the first conductive layer alone, and then flowing the first adhesive into the first gap; and

providing the second conductive layer includes contacting the second conductive layer and the second adhesive, wherein the second aperture extends through the second conductive layer alone, and then flowing the second adhesive into the second gap.

36. The method of claim 31, wherein:

providing the first conductive layer includes providing a first substrate that includes the first conductive layer and a first dielectric layer and then contacting the first dielectric layer and the first adhesive, wherein the first dielectric layer contacts and is sandwiched between the first conductive layer and the first adhesive and is solidified and the first aperture extends through the first conductive layer and the first dielectric layer, and then flowing the first adhesive into the first gap; and

providing the second conductive layer includes providing a second substrate that includes the second conductive layer and a second dielectric layer and then contacting the second dielectric layer and the second adhesive, wherein the second dielectric layer contacts and is sandwiched between the second conductive layer and the second adhesive and is solidified and the second aperture extends through the second conductive layer and the second dielectric layer, and then flowing the second adhesive into the second gap.

37. The method of claim 31, wherein providing the pad and the first cap includes:

grinding the first post, the first adhesive and the first conductive layer such that the first post, the first adhesive and the first conductive layer are laterally aligned with one another at a lateral surface that faces in the first vertical direction; and

then

removing selected portions of the first conductive layer using a first etch mask that defines the pad and the first cap.

38. The method of claim 31, wherein providing the terminals and the second cap includes:

grinding the second post, the second adhesive and the second conductive layer such that the second post, the second adhesive and the second conductive layer are laterally aligned with one another at a lateral surface that faces in the second vertical direction; and

then

removing selected portions of the second conductive layer using a second etch mask that defines the terminals and the second cap.

39. The method of claim 31, wherein providing the conductive trace and the heat spreader includes:

providing first and second holes that extend through the dielectric base, the adhesives and the conductive layers;

then

depositing a plated metal on the posts, the adhesives and the conductive layers, wherein the plated metal forms a first plated layer that covers the first post in the first vertical direction, a second plated layer that covers the second post in the second vertical direction, the first plated through-hole in the first hole and the second plated through-hole in the second hole;

then

forming a first etch mask on the first plated layer that defines the pad and the first cap;

forming a second etch mask on the second plated layer that defines the terminals and the second cap;

then

etching the first conductive layer and the first plated layer in a first pattern defined by the first etch mask;

etching the second conductive layer and the second plated layer in a second pattern defined by the second etch mask; and

then

removing the etch masks.

40. The method of claim 31, wherein mounting the semiconductor device on the first cap includes providing a die attach between a vertical LED chip and the first cap, electrically connecting the semiconductor device to the pad includes providing a wire bond between the vertical LED chip and the pad, and electrically and thermally connecting the semiconductor device to the first cap includes providing the die attach between the vertical LED chip and the first cap.