Semiconductor power device with passivation layers
First Claim
1. A method of manufacturing a power semiconductor device comprising:
- on a substrate of more strongly doped first conductivity type silicon, forming a less strongly first conductivity type epitaxial silicon layer;
using a plasma enhanced chemical vapor deposition process forming a first silicon dioxide layer directly on the epitaxial silicon layer;
introducing into a first region of the epitaxial layer more strongly doped first conductivity type impurity to define a channel stopper region, and introducing into a second region spaced apart from the first region an opposite conductivity type impurity to define an emitter region;
using a plasma enhanced chemical vapor deposition process forming a second silicon dioxide layer directly on at least the first silicon dioxide layer to thereby form a first passivation layer which includes both the first silicon dioxide layer and the second silicon dioxide layer;
forming a first field plate on the passivation layer, the first field plate extending to electrically contact at least a portion of the emitter region and overlying at least a portion of the epitaxial layer adjacent to the emitter region;
forming a second passivation layer on at least a portion of the first passivation layer and on at least a portion of the first field plate; and
further comprising a step of introducing platinum or gold into the epitaxial layer.
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Accused Products
Abstract
A semiconductor power device comprises a semiconductor substrate. The substrate includes an N-type silicon region and N+ silicon region. An oxide layer overlies the N− type silicon region, the oxide layer formed using a Plasma Enhanced Chemical Vapor deposition (PECVD) method. First and second electrodes are coupled to the N− type silicon region and the N+ type silicon region, respectively. The oxide layer has a thickness 0.5 to 3 microns. The power device also includes a polymide layer having a thickness of 3 to 20 microns; a first field plate overlying the oxide layer; and second field plate overlying the polymide layer and the first field plate, wherein the second field plate overlaps the first field plate by 2 to 15 microns.
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Citations
15 Claims
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1. A method of manufacturing a power semiconductor device comprising:
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on a substrate of more strongly doped first conductivity type silicon, forming a less strongly first conductivity type epitaxial silicon layer; using a plasma enhanced chemical vapor deposition process forming a first silicon dioxide layer directly on the epitaxial silicon layer; introducing into a first region of the epitaxial layer more strongly doped first conductivity type impurity to define a channel stopper region, and introducing into a second region spaced apart from the first region an opposite conductivity type impurity to define an emitter region; using a plasma enhanced chemical vapor deposition process forming a second silicon dioxide layer directly on at least the first silicon dioxide layer to thereby form a first passivation layer which includes both the first silicon dioxide layer and the second silicon dioxide layer; forming a first field plate on the passivation layer, the first field plate extending to electrically contact at least a portion of the emitter region and overlying at least a portion of the epitaxial layer adjacent to the emitter region; forming a second passivation layer on at least a portion of the first passivation layer and on at least a portion of the first field plate; and
further comprising a step of introducing platinum or gold into the epitaxial layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification