Method and structure for hydrogenation of silicon substrates with shaped covers
First Claim
1. A method for fabricating a photovoltaic material comprising:
- providing a semiconductor substrate;
forming a first layer and a second layer of porous semiconductor crystalline material on the semiconductor substrate, both layers comprised of a plurality of wormhole structures, wherein density distribution of the wormhole structures in the first layer ranges from 10/cm3 to 1010/cm3 and density distribution of the wormhole structures in the second layer ranges from 1010/cm3 to 1020/cm3, wherein the second layer is in between the first layer and the substrate, wherein detachment from the semiconductor substrate occurs at the second layer;
subjecting the porous semiconductor crystalline material comprised of wormhole structures to a hydrogen plasma species to passivate the semiconductor crystalline material to reduce an electron-hole recombination process;
forming a joining layer over a surface region of the porous semiconductor crystalline material comprised of wormhole structures;
joining the surface region of the porous semiconductor material to a support;
delaminating a portion of the porous semiconductor crystalline material from the semiconductor substrate while the portion of the porous semiconductor crystalline material remains joined to the support via the joining layer, the portion of the porous semiconductor crystalline material forming a continuous layer of porous semiconductor crystalline material comprised of wormhole structures, the delaminating creating a new surface of the porous semiconductor crystalline material, the new surface forming a light-incident surface of the photovoltaic material, the new surface having a texture configured to capture light incident on the surface of the photovoltaic material and characterized by cleaved wormhole structures, the cleaved wormhole structures forming a surface roughness of greater than 10 nanometers to cause less than about 25% reflection from a total amount of irradiating incident light in a wavelength ranging from about 0.1 micron to about 5 microns;
forming a substantially transparent incident light-trapping cover layer having a cover refractive index attached to the new surface, the cover layer having plural facets including wedge angles between adjacent facets configured to reflect incident light reflected from the new surface back into the new surface, the light-trapping cover layer having a thickness of about 1 micron to about 100 microns.
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Abstract
Method and structure for hydrogenation of silicon substrates with shaped covers. According to an embodiment, the present invention provides a method for fabricating a photovoltaic material. The method includes providing a semiconductor substrate. The method also includes forming a crystalline material characterized by a plurality of worm hole structures therein overlying the semiconductor substrate. The worm hole structures are characterized by a density distribution from a surface region of the crystalline material to a defined depth within a z-direction of the surface region to form a thickness of material to be detached. The method further includes providing a glue layer overlying a surface region of the crystalline material. The method includes joining the surface region of the crystalline material via the glue layer to a support substrate.
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Citations
25 Claims
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1. A method for fabricating a photovoltaic material comprising:
- providing a semiconductor substrate;
forming a first layer and a second layer of porous semiconductor crystalline material on the semiconductor substrate, both layers comprised of a plurality of wormhole structures, wherein density distribution of the wormhole structures in the first layer ranges from 10/cm3 to 1010/cm3 and density distribution of the wormhole structures in the second layer ranges from 1010/cm3 to 1020/cm3, wherein the second layer is in between the first layer and the substrate, wherein detachment from the semiconductor substrate occurs at the second layer;
subjecting the porous semiconductor crystalline material comprised of wormhole structures to a hydrogen plasma species to passivate the semiconductor crystalline material to reduce an electron-hole recombination process;
forming a joining layer over a surface region of the porous semiconductor crystalline material comprised of wormhole structures;
joining the surface region of the porous semiconductor material to a support;
delaminating a portion of the porous semiconductor crystalline material from the semiconductor substrate while the portion of the porous semiconductor crystalline material remains joined to the support via the joining layer, the portion of the porous semiconductor crystalline material forming a continuous layer of porous semiconductor crystalline material comprised of wormhole structures, the delaminating creating a new surface of the porous semiconductor crystalline material, the new surface forming a light-incident surface of the photovoltaic material, the new surface having a texture configured to capture light incident on the surface of the photovoltaic material and characterized by cleaved wormhole structures, the cleaved wormhole structures forming a surface roughness of greater than 10 nanometers to cause less than about 25% reflection from a total amount of irradiating incident light in a wavelength ranging from about 0.1 micron to about 5 microns;
forming a substantially transparent incident light-trapping cover layer having a cover refractive index attached to the new surface, the cover layer having plural facets including wedge angles between adjacent facets configured to reflect incident light reflected from the new surface back into the new surface, the light-trapping cover layer having a thickness of about 1 micron to about 100 microns. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
- providing a semiconductor substrate;
Specification