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Light emitting structure including high-al content MQWH

  • US 8,154,009 B1
  • Filed: 05/04/2009
  • Issued: 04/10/2012
  • Est. Priority Date: 11/14/2005
  • Status: Active Grant
First Claim
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1. A semiconductor light emitting diode structure of a type formed on a substrate, wherein said substrate is removed and said semiconductor light emitting diode is bonded to a heat sink structure, comprising:

  • first and second index guiding layers;

    a multiple quantum well heterostructure of a composition including at least 25% aluminum, formed between said first and second index guiding layers; and

    a heat sink to which said first and second index guiding layers having said multiple quantum well heterostructure therebetween are bonded;

    wherein said multiple quantum well heterostructure is substantially free from structural cracks;

    wherein said structure is capable of emitting light at a wavelength of approximately 325 nm.

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