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Light-emitting device including thin film transistor

  • US 8,154,015 B2
  • Filed: 04/13/2010
  • Issued: 04/10/2012
  • Est. Priority Date: 11/09/2001
  • Status: Expired due to Term
First Claim
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1. A light emitting device having a light emitting element, the light emitting element comprising:

  • a thin film transistor over a substrate;

    a first electrode over the substrate;

    an organic compound layer over the first electrode; and

    a second electrode over the organic compound layer;

    wherein the thin film transistor connected to the light emitting element comprises a semiconductor film including a channel forming region interposed between at least one pair of impurity regions, andwherein a channel length L of the thin film transistor is 100 μ

    m or more.

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