Light-emitting device including thin film transistor
First Claim
1. A light emitting device having a light emitting element, the light emitting element comprising:
- a thin film transistor over a substrate;
a first electrode over the substrate;
an organic compound layer over the first electrode; and
a second electrode over the organic compound layer;
wherein the thin film transistor connected to the light emitting element comprises a semiconductor film including a channel forming region interposed between at least one pair of impurity regions, andwherein a channel length L of the thin film transistor is 100 μ
m or more.
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Abstract
The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.
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Citations
19 Claims
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1. A light emitting device having a light emitting element, the light emitting element comprising:
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a thin film transistor over a substrate; a first electrode over the substrate; an organic compound layer over the first electrode; and a second electrode over the organic compound layer; wherein the thin film transistor connected to the light emitting element comprises a semiconductor film including a channel forming region interposed between at least one pair of impurity regions, and wherein a channel length L of the thin film transistor is 100 μ
m or more. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A light emitting device having a light emitting element, the light emitting element comprising:
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a thin film transistor over a substrate; a first electrode over the substrate; an organic compound layer over the first electrode; and a second electrode over the organic compound layer; wherein the thin film transistor connected to the light emitting element comprises a semiconductor film including a channel forming region interposed between at least one pair of impurity regions, and wherein a ratio of a channel width W of the thin film transistor to a channel length L thereof is from 0.1 to 0.01. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A light emitting device having a light emitting element, the light emitting element comprising:
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a thin film transistor over a substrate; a first electrode over the substrate; an organic compound layer over the first electrode; and a second electrode over the organic compound layer; wherein the thin film transistor connected to the light emitting element comprises a semiconductor film including a channel forming region interposed between a source region and a drain region, and wherein the thin film transistor, in the range that the sum of source-drain voltage Vd and threshold voltage Vth is larger than gate voltage Vg, has a channel conductance gd from 0 to 2×
10−
9 S. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification