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Amorphous oxide semiconductor, semiconductor device, and thin film transistor

  • US 8,154,017 B2
  • Filed: 04/15/2008
  • Issued: 04/10/2012
  • Est. Priority Date: 04/25/2007
  • Status: Active Grant
First Claim
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1. An amorphous oxide semiconductor containing at least one element selected from In, Ga, and Zn at an atomic ratio of InxGayZnz, wherein a mass density M of the amorphous oxide semiconductor is represented by a relational expression (1) shown below:


  • M≧

    0.94×

    (7.121x+5.941y+5.675z)/(x+y+z)  



    (1)where 0≦

    x≦

    1, 0≦

    y≦

    1, 0≦

    z≦

    1, and x+y+z≠

    0.

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