CMOS image sensors and related devices and fabrication methods

• US 8,154,062 B2
• Filed: 10/16/2009
• Issued: 04/10/2012
• Est. Priority Date: 12/17/2008
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Park, Byung-Jun
• Primary Examiner(s): NGO, NGAN V
• Application Number:
  US12/580,393
• Publication Number:
  US 20100148290A1
• Time in Patent Office: 907 Days
• Field of Search: 257/291, 257/292, 257/432, 257/436, 257/E31.127
• US Class Current: 257/291
• CPC Class Codes: H01L 27/14601 Structural or functional details thereof
• CPC Class Codes: H01L 27/14629 Reflectors
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 31/02327 the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216

Abstract

An image sensor device includes a substrate including a light sensing, region therein and a reflective structure on a first surface of the substrate over the light sensing region. An interconnection structure having a lower reflectivity than the reflective structure is provided on the first surface of the substrate adjacent to the reflective structure. A microlens is provided on a second surface of the substrate opposite the first surface. The microlens is configured to direct incident light to the light sensing region, and the reflective structure is configured to reflect portions of the incident light that pass through the light sensing region back toward the light sensing region. Related devices and fabrication methods are also discussed.

Claims

1. An image sensor device, comprising:

a substrate including a light sensing region therein;

a reflective structure on a first surface of the substrate over the light sensing region;

an interconnection structure having a lower reflectivity than the reflective structure on the first surface of the substrate adjacent to the reflective structure; and

a microlens and a color filter on a second surface of the substrate opposite the first surface,

wherein the reflective structure is configured to reflect portions of the incident light that pass through the light sensing region back toward the light sensing region.

2. The device of claim 1, wherein:

the reflective structure comprises a conductive layer; and

the interconnection structure comprises the conductive layer and an adhesive layer between the conductive layer and the substrate, wherein the adhesive layer reduces a reflectivity of the interconnection structure relative to that of the reflective structure.

3. The device of claim 2, wherein the reflective structure is aligned with the light sensing region in plan view such that the portions of the incident light that pass through the light sensing region are incident on the reflective structure.

4. The device of claim 3, wherein the reflective structure is concave or convex in cross section.

5. The device of claim 3, wherein the reflective structure comprises a first reflective structure, and further comprising:

an interlayer dielectric layer on the first reflective structure; and

a second reflective structure on the interlayer dielectric layer over the light sensing region and laterally offset from the first reflective structure,

wherein the second reflective structure is configured to reflect portions of the incident light that pass through the light sensing region and are not reflected by the first reflective structure back towards the light sensing region.

6. The device of claim 3, further comprising:

an interlayer dielectric layer on the first surface of the substrate between the reflective structure and the light sensing region, the interlayer dielectric layer including at least one gate structure therein electrically connected to the interconnection structure,

wherein the at least one gate structure does not obstruct passage of the portions of the incident light that pass through the light sensing region to the reflective structure.

7. The device of claim 6, further comprising:

a recess in the interlayer dielectric layer adjacent to the reflective structure and aligned with the at least one gate structure therein, wherein the interconnection structure including the adhesive layer extends into the recess.

8. The device of claim 7, wherein portions of the adhesive layer extend on sidewalls of the recess and are configured to reflect the portions of the incident light back toward the light sensing region.

9. The device of claim 7, further comprising:

a second recess in the interlayer dielectric layer adjacent to the interconnection structure and aligned with the light sensing region in the substrate, wherein the reflective structure extends into the second recess.

10. The device of claim 2, wherein the conductive layer comprises aluminum, and wherein the adhesive layer comprises titanium (Ti), titanium nitride (TiN), and/or a combination thereof.

11. The device of claim 1, wherein the portions of the incident light that pass through the light sensing region comprise wavelengths of greater than about 500 nm.