Near field detector for integrated surface plasmon resonance biosensor applications

• US 8,154,729 B2
• Filed: 05/06/2010
• Issued: 04/10/2012
• Est. Priority Date: 11/27/2007
• Status: Expired due to Fees

• Current Assignee: Massachusetts Institute of Technology
• Original Assignee: Massachusetts Institute of Technology
• Inventors: Bora, Mihail, Celebi, Kemal, Baldo, Marc A, Mapel, Jonathan K
• Primary Examiner(s): Ton, Tri T
• Application Number:
  US12/774,974
• Publication Number:
  US 20100328671A1
• Time in Patent Office: 705 Days
• Field of Search: 356/317, 356/445, 356/311, 356/300, 356/417, 356/948, 356/949, 250/483.1, 250/487.1, 250/488.1, 250/486.1, 250/458.1, 250/459.1, 250/461.2, 250/465.1, 250/466.1, 436/171, 436/172, 436/518, 436/519, 436/524, 436/164, 436/805, 436/807, 435/287.1, 435/287.9, 435/288.7, 385/129, 385/131
• US Class Current: 356/445
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G01N 21/553 and using surface plasmons fluorescence excitation G01N21/648; enhanced Raman G01N21/658
• CPC Class Codes: H10K 30/211 comprising multiple junctions, e.g. double heterojunctions
• CPC Class Codes: H10K 85/211 Fullerenes, e.g. C60
• CPC Class Codes: Y02E 10/549 Organic PV cells

Abstract

A near-field surface plasmon detector is provided. The near-field surface plasmon detector includes one or more semiconductor layers that absorb one or more surface plasmons of thin metal films in the vicinity of the semiconductor layer. The surface plasmons are excited by incoming light being emitted from a light emitting source. The metal films are also employed as electrical contacts used to capture photocurrent generated after absorption of surface plasmons by the semiconductor layers.

Claims

1. A near-field surface plasmon detector comprising:

a semiconductor structure that measures one or more surface plasmons of a sample being tested using incoming light being emitted from a light emitting source, the light emitting source is positioned so the light is emitted at an off angle; and

a plurality of electrodes positioned on or near said semiconductor structure, said one of the electrodes comprises one or more electrical contacts used to output electrical power under operation, the one or more surface plasmons being used to provide power to the near-field plasmon detector, the semiconductor structure being sandwiched between the electrodes, wherein the arrangement of the semiconductor structure and the electrodes is a heterojunction diode that converts the evanescent field of the one or more surface plasmons at a liquid aqueous-gold interface into photocurrents.

2. The near-field surface plasmon detector of claim 1, wherein said light emitting source comprises a laser.

3. The near-field surface plasmon detector of claim 1, wherein said light emitting source comprises a LED or VCSEL.

4. The near-field surface plasmon detector of claim 1 further comprising a semitransparent electrode structure having one or more transparent materials, said semitransparent electrode structure receives said incoming light signal from said light emitting source.

5. The near-field surface plasmon detector of claim 4, wherein said semitransparent electrode structure comprises a glass substrate and an Au layer formed on said glass substrate.

6. The near-field surface plasmon detector of claim 1, wherein said semiconductor structure comprises organic materials.

7. The near-field surface plasmon detector of claim 1, wherein said semiconductor layer comprises Si or material structures comprising GaAs or InP.

8. The near-field surface plasmon detector of claim 1, wherein said semiconductor layer, and said one or more electrodes form a heterojunction diode.

9. The near-field surface plasmon detector of claim 1, wherein said one or more electrodes comprise Au or Ag.

10. The near-field surface plasmon detector of claim 1, wherein said semiconductor structure and said electrodes comprises a photovoltaic structure.

11. The near-field surface plasmon detector of claim 1, wherein said semiconductor layer comprises a stack having a plurality of semiconductor layers.

12. A method of performing a near-field surface plasmon detection comprising:

providing a semiconductor structure that measures one or more surface plasmons of a sample being tested using incoming light being emitted from a light emitting source, the light emitting source being positioned so the light is emitted at an off angle; and

positioning a plurality of electrodes on or near said semiconductor structure, said one or more electrode comprise one or more electrical contacts used to output electrical power under operation, the one or more surface plasmons being used to provide power to the near-field plasmon detector, the semiconductor structure being sandwiched between the electrodes, wherein the arrangement of the semiconductor structure and the electrodes is a heterojunction diode that converts the evanescent field of the one or more surface plasmons at a liquid aqueous-gold interface into photocurrents.

13. The method of claim 12, wherein said light emitting source comprises a laser.

14. The method of claim 12, wherein said light emitting source comprises a LED or VCSEL.

15. The method of claim 12 further comprising a semitransparent electrode structure having one or more transparent materials, said semitransparent electrode structure receives said incoming light signal from said light emitting source.

16. The method of claim 15, wherein said semitransparent electrode structure comprises a glass substrate and an Au layer formed on said glass substrate.

17. The method of claim 12, wherein said semiconductor structure comprises organic materials.

18. The method of claim 12, wherein said semiconductor layer comprises Si or material structures comprising GaAs or InP.

19. The method of claim 12, wherein said semiconductor layer, and said one or more electrodes form a heterojunction diode.

20. The method of claim 12, wherein said one or more electrodes comprise Au or Ag.

21. The method of claim 12, wherein said semiconductor structure and said electrodes comprises a photovoltaic structure.

22. The method of claim 12, wherein said semiconductor layer comprises a stack having a plurality of semiconductor layers.