Methods of fabricating complex two-dimensional conductive silicides
First Claim
1. A conductive silicide comprising a plurality of connected and spaced-apart nanobeams linked together at an about 90-degree angle, the plurality of nanobeams forming a two-dimensional nanostructure having a mesh-like appearance.
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Abstract
The embodiments disclosed herein relate to the fabrication of complex two-dimensional conductive silicide nanostructures, and methods of fabricating the nanostructures. In an embodiment, a conductive silicide includes a plurality of connected and spaced-apart nanobeams linked together at an about 90-degree angle, the plurality of nanobeams forming a two-dimensional nanostructure having a mesh-like appearance. In an embodiment, a method of fabricating a two-dimensional conductive silicide includes performing chemical vapor deposition, wherein one or more gas or liquid precursor materials carried by a carrier gas stream react to form a nanostructure having a mesh-like appearance and including a plurality of connected and spaced-apart nanobeams linked together at an about 90-degree angle.
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Citations
23 Claims
- 1. A conductive silicide comprising a plurality of connected and spaced-apart nanobeams linked together at an about 90-degree angle, the plurality of nanobeams forming a two-dimensional nanostructure having a mesh-like appearance.
- 14. A conductive silicide nanostructure comprising a plurality of two-dimensional nanonet sheets, wherein each of the nanonet sheets include connected and spaced-apart nanobeams linked together at an about 90-degree angle.
- 17. A method of fabricating a two-dimensional conductive silicide comprising performing chemical vapor deposition, wherein one or more gas or liquid precursor materials carried by a carrier gas stream react to form a nanostructure having a mesh-like appearance and including a plurality of connected and spaced-apart nanobeams linked together at an about 90-degree angle.
Specification