Method of manufacturing a liquid crystal display device with a semiconductor film including zinc oxide
First Claim
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1. A method of manufacturing a liquid crystal display device having an active matrix portion, the method comprising:
- forming a metal film over a first substrate;
forming a conductive film comprising an oxide over and in contact with the metal film;
forming a semiconductor film containing zinc oxide as a channel formation region, over and in contact with the conductive film;
removing a portion of the conductive film, wherein the portion is out of contact with the semiconductor film prior to removing the portion;
forming a closed pattern of a sealant around the active matrix portion;
dropping liquid crystal composition in the closed pattern; and
attaching the first substrate and a second substrate to each other after dropping the liquid crystal composition.
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Abstract
To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or p-type impurity is added is used for a source electrode and a drain electrode. The semiconductor device includes a gate insulating film formed by using a silicon oxide film or a silicon oxynitride film over a gate electrode, an Al film or an Al alloy film over the gate insulating film, a ZnO film to which an n-type or p-type impurity is added over the Al film or the Al alloy film, and a ZnO semiconductor film over the ZnO film to which an n-type or p-type impurity is added and the gate insulating film.
294 Citations
21 Claims
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1. A method of manufacturing a liquid crystal display device having an active matrix portion, the method comprising:
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forming a metal film over a first substrate; forming a conductive film comprising an oxide over and in contact with the metal film; forming a semiconductor film containing zinc oxide as a channel formation region, over and in contact with the conductive film; removing a portion of the conductive film, wherein the portion is out of contact with the semiconductor film prior to removing the portion; forming a closed pattern of a sealant around the active matrix portion; dropping liquid crystal composition in the closed pattern; and attaching the first substrate and a second substrate to each other after dropping the liquid crystal composition. - View Dependent Claims (2, 3, 4, 5)
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6. A method of manufacturing a liquid crystal display device comprising:
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forming a thin film transistor over a first substrate by the method comprising; forming a metal film over the first substrate; forming a conductive film comprising an oxide over and in contact with the metal film; forming a semiconductor film comprising zinc oxide over and in contact with the conductive film; forming a gate electrode adjacent to the semiconductor film with a gate insulating film interposed therebetween; and removing a portion of the conductive film, wherein the portion is out of contact with the semiconductor film prior to removing the portion forming a pixel electrode over the first substrate wherein the pixel electrode is electrically connected to the thin film transistor; forming a closed pattern of a sealant over the first substrate; dropping liquid crystal composition over the pixel electrode in the closed pattern; and attaching a second substrate to the first substrate with the liquid crystal composition between the first substrate and the second substrate. - View Dependent Claims (7, 8, 9, 10)
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11. A method of manufacturing a liquid crystal display device comprising:
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forming a thin film transistor over a first substrate by a method comprising; forming a gate electrode; forming a gate insulating film formed over the gate electrode; forming a metal film formed over the first substrate; forming a conductive film comprising an oxide on and in contact with the metal film; forming a semiconductor film comprising zinc oxide on and in contact with the conductive film and the gate insulating film interposed therebetween; and removing a portion of the conductive film, wherein the portion is out of contact with the semiconductor film prior to removing the portion forming an insulating film comprising a resin material on the semiconductor film; forming a pixel electrode over the insulating film wherein the pixel electrode is electrically connected to the thin film transistor through a contact hole of the insulating film; forming a closed pattern of a sealant over the first substrate; dropping liquid crystal composition over the pixel electrode in the closed pattern; and attaching a second substrate to the first substrate with the liquid crystal composition between the first substrate and the second substrate. - View Dependent Claims (12, 13, 14, 15)
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16. A method of manufacturing a liquid crystal display device comprising:
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forming a gate electrode over a first substrate; forming a gate insulating film over the gate electrode; forming a metal film over the first substrate; forming a conductive film comprising an oxide on and in contact with the metal film; and forming a semiconductor film comprising zinc oxide on and in contact with the conductive film and the gate insulating film; removing a portion of the conductive film, wherein the portion is out of contact with the semiconductor film prior to removing the portion forming an insulating film on the semiconductor film; forming a pixel electrode over the insulating film wherein the pixel electrode is in contact with the conductive film through a contact hole of the insulating film; forming a closed pattern of a sealant over the first substrate; dropping liquid crystal composition over the pixel electrode in the closed pattern; and attaching a second substrate to the first substrate with the liquid crystal composition between the first substrate and the second substrate. - View Dependent Claims (17, 18, 19, 20, 21)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsAkimoto, Kengo
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Primary Examiner(s)Pizarro, Marcos D.
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Assistant Examiner(s)MONTALVO, EVA Y
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Application NumberUS12/411,957Publication NumberTime in Patent Office1,118 DaysField of Search438/618, 438/30, 257/223, 257/227, 257/291, 257/292, 257/439, 257/443, 257/655, 257/43US Class Current438/149CPC Class CodesH01L 27/1214 comprising a plurality of T...H01L 27/1225 with semiconductor material...H01L 27/1255 integrated with passive dev...H01L 29/41733 for thin film transistors w...H01L 29/45 Ohmic electrodesH01L 29/4908 for thin film semiconductor...H01L 29/78621 with LDD structure or an ex...H01L 29/7869 having a semiconductor body...
