IC card and booking-account system using the IC card

• US 8,158,491 B2
• Filed: 12/27/2010
• Issued: 04/17/2012
• Est. Priority Date: 12/27/2002
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Takayama, Toru, Maruyama, Junya, Goto, Yuugo, Ohno, Yumiko, Akiba, Mai
• Primary Examiner(s): Vu, David
• Assistant Examiner(s): Taylor, Earl
• Application Number:
  US12/979,052
• Publication Number:
  US 20110092025A1
• Time in Patent Office: 477 Days
• Field of Search: 438/455, 438/458, 438/459
• US Class Current: 438/458
• CPC Class Codes: G06K 19/077 Constructional details, e.g. mounting of circuits in the carrier
• CPC Class Codes: G06K 19/07703 the interface being visual
• CPC Class Codes: G06Q 20/105 involving programming of a portable memory device, e.g. IC cards, "electronic purses"
• CPC Class Codes: G06Q 20/3415 Cards acting autonomously as pay-media
• CPC Class Codes: G07F 7/1008 Active credit-cards provided with means to personalise their use, e.g. with PIN-introduction/comparison system
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01047 Silver [Ag]
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/10271 Silicon-germanium [SiGe]
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding

Abstract

It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device and a plurality of thin film integrated circuits; wherein driving of the display device is controlled by the plurality of thin film integrated circuits; a semiconductor element used for the plurality of thin film integrated circuits and the display device is formed by using a polycrystalline semiconductor film; the plurality of thin film integrated circuits are laminated; the display device and the plurality of thin film integrated circuits are equipped for the same printed wiring board; and the IC card has a thickness of from 0.05 mm to 1 mm.

Claims

1. A method for manufacturing an article comprising:

forming a metal film over a substrate;

forming a metal oxide film by oxidizing a surface of the metal film;

selectively removing the metal film formed in an edge portion of the substrate;

forming a base film over the metal oxide film;

forming a semiconductor element over the base film; and

separating the semiconductor element and the base film from the substrate by physical means.

2. The method for manufacturing the article according to claim 1, further comprising forming an insulating film on the substrate.

3. The method for manufacturing the article according to claim 1, wherein the metal film includes tungsten.

4. The method for manufacturing the article according to claim 1, wherein the semiconductor element comprises a thin film transistor.

5. The method for manufacturing the article according to claim 1, wherein the semiconductor element comprises a memory element.

6. The method for manufacturing the article according to claim 1, wherein the article is a card having a thickness of from 0.05 mm to 1 mm.

7. The method for manufacturing the article according to claim 1, wherein the article further comprises an antenna.

8. A method for manufacturing an article comprising:

forming a metal film over a substrate;

forming a metal oxide film by oxidizing a surface of the metal film;

selectively removing the metal film formed in an edge portion of the substrate;

forming a base film over the metal oxide film;

forming a semiconductor element over the base film;

forming a pixel electrode electrically connected to the semiconductor element; and

separating the pixel electrode, the semiconductor element and the base film from the substrate by physical means.

9. The method for manufacturing the article according to claim 8, further comprising forming an insulating film on the substrate.

10. The method for manufacturing the article according to claim 8, wherein the metal film includes tungsten.

11. The method for manufacturing the article according to claim 8, wherein the semiconductor element comprises a thin film transistor.

12. The method for manufacturing the article according to claim 8, wherein the article is a card having a thickness of from 0.05 mm to 1 mm.

13. The method for manufacturing the article according to claim 8, wherein the article further comprises an antenna.

14. The method for manufacturing the article according to claim 8, wherein the article is a display device.

15. The method for manufacturing the article according to claim 14, wherein the display device is a liquid crystal display device.

16. A method for manufacturing an article comprising:

forming a metal film over a substrate;

forming an oxide film over the metal film wherein a metal oxide film is formed between the metal film and the oxide film;

selectively removing the metal film formed in an edge portion of the substrate;

forming a base film over the metal oxide film;

forming a semiconductor element over the base film;

forming a pixel electrode electrically connected to the semiconductor element; and

separating the pixel electrode, the semiconductor element and the base film from the substrate by physical means.

17. The method for manufacturing the article according to claim 16, further comprising forming an insulating film on the substrate.

18. The method for manufacturing the article according to claim 16, wherein the metal film includes tungsten.

19. The method for manufacturing the article according to claim 16, wherein the semiconductor element comprises a thin film transistor.

20. The method for manufacturing the article according to claim 16, wherein the article is a card having a thickness of from 0.05 mm to 1 mm.

21. The method for manufacturing the article according to claim 16, wherein the article further comprises an antenna.

22. The method for manufacturing the article according to claim 16, wherein the article is a display device.

23. The method for manufacturing the article according to claim 22, wherein the display device is a liquid crystal display device.