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Method for preparing compound semiconductor substrate

  • US 8,158,496 B2
  • Filed: 09/09/2010
  • Issued: 04/17/2012
  • Est. Priority Date: 10/24/2007
  • Status: Active Grant
First Claim
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1. A method for preparing a compound semiconductor substrate, the method comprising:

  • coating a plurality of spherical balls on a substrate;

    growing a first compound semiconductor epitaxial layer to a thickness smaller than sizes of the spherical balls on the substrate coated with the spherical balls;

    forming a plurality of voids by removing the spherical balls from the substrate on which the first compound semiconductor epitaxial layer is grown;

    growing a second compound semiconductor epitaxial layer on the first compound semiconductor epitaxial layer with the voids; and

    cooling the substrate on which the first and second compound semiconductor epitaxial layers are grown, so that the first compound semiconductor epitaxial layer and the second compound semiconductor epitaxial layer are self-separated along the voids.

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