Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor
First Claim
Patent Images
1. A polycrystalline semiconductor thin film which contains indium, a positive bivalent element and oxygen,the thin film having a crystallinity with a locking curve half value width of 1°
- or less in an X-ray diffraction method,wherein crystals are aligned in a predetermined direction.
1 Assignment
0 Petitions
Accused Products
Abstract
An object of the present invention is to provide a novel semiconductor device which is excellent in stability, uniformity, reproducibility, heat resistance, durability and the like, and can exert excellent transistor properties. The semiconductor device is a thin-film transistor, and this thin-film transistor uses, as an active layer, a polycrystalline oxide semiconductor thin film containing In and two or more metals other than In and having an electron carrier concentration of less than 1×1018/cm3.
120 Citations
10 Claims
-
1. A polycrystalline semiconductor thin film which contains indium, a positive bivalent element and oxygen,
the thin film having a crystallinity with a locking curve half value width of 1° - or less in an X-ray diffraction method,
wherein crystals are aligned in a predetermined direction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
- or less in an X-ray diffraction method,
Specification