Semiconducting sheet

• US 8,158,983 B2
• Filed: 12/23/2008
• Issued: 04/17/2012
• Est. Priority Date: 01/03/2008
• Status: Active Grant

• Current Assignee: Goldeneye, Inc.
• Original Assignee: Goldeneye, Inc.
• Inventors: Beeson, Karl W., Zimmerman, Scott M., Livesay, William R., Ross, Richard L.
• Primary Examiner(s): Mandala, Victor A
• Application Number:
  US12/317,635
• Publication Number:
  US 20090173954A1
• Time in Patent Office: 1,211 Days
• Field of Search: 257/59, 257/72, 257/88, 257/291, 257/443, 257/E33.005, 257/E31.054
• US Class Current: 257/72
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 31/042 PV modules or arrays of single PV cells supporting structures for PV modules H02S20/00
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

A substrate-free semiconducting sheet has an array of semiconducting elements dispersed in a matrix material. The matrix material is bonded to the edge surfaces of the semiconducting elements and the substrate-free semiconducting sheet is substantially the same thickness as the semiconducting elements.

Claims

1. A substrate-free semiconducting sheet, comprising:

an array of semiconducting elements bonded to a matrix material to form a thin film;

said semiconducting elements including at least one light emitting diode chip, at least one photovoltaic chip, at least one solar cell chip, at least one wavelength conversion chip, at least one transistor chip, at least one diode chip, or at least one charge storage device;

wherein each of said semiconducting elements has a first surface, a second surface and one or more edge surfaces that connect said first surface and said second surface;

wherein said matrix material is bonded to said edge surfaces of said semiconducting elements;

wherein said substrate-free semiconducting sheet is substantially the same thickness as said semiconducting elements; and

wherein said semiconductor element is at least one light emitting diode chip, said at least one light emitting diode chip is substrate-free and said at least one light emitting diode chip is at least 10 microns thick.

2. A substrate-free semiconducting sheet, comprising:

an array of semiconducting elements bonded to a matrix material to form a thin film;

said semiconducting elements including at least one light emitting diode chip, at least one photovoltaic chip, at least one solar cell chip, at least one wavelength conversion chip, at least one transistor chip, at least one diode chip, or at least one charge storage device;

wherein each of said semiconducting elements has a first surface, a second surface and one or more edge surfaces that connect said first surface and said second surface;

wherein said matrix material is bonded to said edge surfaces of said semiconducting elements;

wherein said substrate-free semiconducting sheet is substantially the same thickness as said semiconducting elements; and

wherein said semiconductor element is at least one photovoltaic chip, said at least one photovoltaic chip is substrate-free and said at least one photovoltaic chip is at least 10 microns thick.

3. A substrate-free semiconducting sheet, comprising:

an array of semiconducting elements bonded to a matrix material to form a thin film;

wherein each of said semiconducting elements has a first surface, a second surface and one or more edge surfaces that connect said first surface and said second surface;

wherein said matrix material is bonded to said edge surfaces of said semiconducting elements;

wherein said substrate-free semiconducting sheet is substantially the same thickness as said semiconducting elements; and

wherein said matrix material includes an organic material.

4. The substrate-free semiconducting sheet of claim 3, wherein said organic material is a hot melt adhesive, an ultraviolet-light curable material, a moisture curable material, a porous material or a B-staged material.

5. The substrate-free semiconducting sheet of claim 3, wherein an inorganic material is mixed with said inorganic material in said matrix material.

6. A substrate-free semiconducting sheet, comprising:

an array of semiconducting elements bonded to a matrix material to form a thin film;

wherein each of said semiconducting elements has a first surface, a second surface and one or more edge surfaces that connect said first surface and said second surface;

wherein said matrix material is bonded to said edge surfaces of said semiconducting elements;

wherein said substrate-free semiconducting sheet is substantially the same thickness as said semiconducting elements; and

wherein said semiconducting sheet is a display device having light emitting diodes, active addressing means and interconnection means.

7. A substrate-free semiconducting sheet, comprising:

an array of semiconducting elements bonded to a matrix material to form a thin film;

an array of wavelength conversion elements formed on said sheet;

wherein each of said semiconducting elements has a first surface, a second surface and one or more edge surfaces that connect said first surface and said second surface;

wherein said matrix material is bonded to said edge surfaces of said semiconducting elements; and

wherein said substrate-free semiconducting sheet is substantially the same thickness as said semiconducting elements.