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Nitride semiconductor crystal with surface texture

  • US 8,158,993 B2
  • Filed: 08/23/2007
  • Issued: 04/17/2012
  • Est. Priority Date: 08/28/2006
  • Status: Expired due to Fees
First Claim
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1. A nitride semiconductor light emitting device comprising:

  • a substrate;

    a semiconductor layer formed on the substrate and having a plurality of projections, wherein an inclination angle of a surface of each projection relative to a substrate surface changes smoothly as viewed in a cross section perpendicular to the substrate surface, wherein the inclination angle of the surface of each projection changes smoothly within 0 to 30 degrees; and

    a quantum well formed on the semiconductor layer and comprising material containing GaN, wherein an inclination angle of a surface of the quantum well changes smoothly within 0 to 3 degrees along an a-axis direction and within 0 to 30 degrees along an m-axis direction.

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