Nitride semiconductor crystal with surface texture
First Claim
1. A nitride semiconductor light emitting device comprising:
- a substrate;
a semiconductor layer formed on the substrate and having a plurality of projections, wherein an inclination angle of a surface of each projection relative to a substrate surface changes smoothly as viewed in a cross section perpendicular to the substrate surface, wherein the inclination angle of the surface of each projection changes smoothly within 0 to 30 degrees; and
a quantum well formed on the semiconductor layer and comprising material containing GaN, wherein an inclination angle of a surface of the quantum well changes smoothly within 0 to 3 degrees along an a-axis direction and within 0 to 30 degrees along an m-axis direction.
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Accused Products
Abstract
A nitride semiconductor light emitting device is formed by: forming a resist pattern on a first nitride semiconductor layer formed on a substrate, the resist pattern having a region whose inclination angle relative to a substrate surface changes smoothly as viewed in a cross section perpendicular to the substrate surface; etching the substrate by using the resist pattern as a mask to transfer the resist pattern to the first nitride semiconductor layer; and forming an light emitting layer on the patterned first nitride semiconductor layer. The nitride semiconductor light emitting device can emit near-white light or have a wavelength range generally equivalent to or near visible light range.
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Citations
5 Claims
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1. A nitride semiconductor light emitting device comprising:
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a substrate; a semiconductor layer formed on the substrate and having a plurality of projections, wherein an inclination angle of a surface of each projection relative to a substrate surface changes smoothly as viewed in a cross section perpendicular to the substrate surface, wherein the inclination angle of the surface of each projection changes smoothly within 0 to 30 degrees; and a quantum well formed on the semiconductor layer and comprising material containing GaN, wherein an inclination angle of a surface of the quantum well changes smoothly within 0 to 3 degrees along an a-axis direction and within 0 to 30 degrees along an m-axis direction. - View Dependent Claims (2, 3, 4)
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5. A nitride semiconductor crystal comprising:
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a substrate; a semiconductor layer formed on the substrate and having a plurality of projections, a surface of each projection including a region whose inclination angle relative to a substrate surface changes smoothly as viewed in a cross section perpendicular to the substrate surface, wherein the inclination angle of the surface of each projection changes smoothly within 0 to 30 degrees; and a quantum well formed on the semiconductor layer and comprising a material containing GaN, wherein an inclination angle of a surface of the quantum well changes smoothly within 0 to 3 degrees along an a-axis direction and within 0 to 30 degrees along the m-axis direction.
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Specification