Semiconductor device
First Claim
1. A semiconductor device comprising:
- a substrate,an integrated circuit including a thin film transistor,an antenna having a conducting wire comprising a first portion and a second portion defining a gap therebetween, andan insulating film comprising at least one selected from the group of polyimide, epoxy, acryl and polyamide over the conducting wire and the integrated circuit to fill the gap between the first portion and the second portion,wherein the integrated circuit and the antenna are formed over the substrate to be electrically connected to each other, andparticles comprising a soft magnetic material are included in the insulating film.
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Accused Products
Abstract
A semiconductor device such as an ID chip of the present invention includes an integrated circuit using a semiconductor element formed by using a thin semiconductor film, and an antenna connected to the integrated circuit. It is preferable that the antenna is formed integrally with the integrated circuit, since the mechanical strength of an ID chip can be enhanced. Note that the antenna used in the present invention also includes a conducting wire that is wound round circularly or spirally and fine particles of a soft magnetic material are arranged between the conducting wires. Specifically, an insulating layer in which fine particles of a soft magnetic material are arranged between the conducting wires. Specifically, an insulating layer in which fine particles of a soft magnetic material are included is arranged between the conducting wires.
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Citations
22 Claims
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1. A semiconductor device comprising:
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a substrate, an integrated circuit including a thin film transistor, an antenna having a conducting wire comprising a first portion and a second portion defining a gap therebetween, and an insulating film comprising at least one selected from the group of polyimide, epoxy, acryl and polyamide over the conducting wire and the integrated circuit to fill the gap between the first portion and the second portion, wherein the integrated circuit and the antenna are formed over the substrate to be electrically connected to each other, and particles comprising a soft magnetic material are included in the insulating film. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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2. A semiconductor device comprising:
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a substrate, an integrated circuit including a thin film transistor, an antenna having a conducting wire comprising a first portion and a second portion defining a gap therebetween, and a resin film comprising at least one selected from the group of polyimide, epoxy, acryl and polyamide over the conducting wire and the integrated circuit to fill the gap between the first portion and the second portion, wherein the integrated circuit and the antenna are formed over the substrate to be electrically connected to each other, and particles comprising a soft magnetic material are included in the resin film. - View Dependent Claims (16)
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3. A semiconductor device comprising:
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a substrate, an integrated circuit including a thin film transistor, an antenna having a conducting wire, a first insulating film over the substrate, the first insulating film covering the conducting wire and the thin film transistor, and a second insulating film comprising at least one selected from the group of polyimide, epoxy, acryl and polyamide over the first insulating film covering the conducting wire and the integrated circuit, wherein the integrated circuit and the antenna are formed over the substrate to be electrically connected to each other, and particles comprising a soft magnetic material are included in the second insulating film. - View Dependent Claims (17)
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4. A semiconductor device comprising:
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a substrate, an integrated circuit including a thin film transistor, an antenna having a conducting wire, an insulating film over the substrate, the insulating film covering the conducting wire and the thin film transistor, and a resin film comprising at least one selected from the group of polyimide, epoxy, acryl and polyamide over the insulating film covering the conducting wire and the integrated circuit, wherein the integrated circuit and the antenna are formed over the substrate to be electrically connected to each other, and particles comprising a soft magnetic material are included in the resin film. - View Dependent Claims (18)
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5. A semiconductor device comprising:
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a substrate, an integrated circuit including a thin film transistor, an antenna having a conducting wire, a first insulating film covering the thin film transistor, a second insulating film over the first insulating film, the conducting wire over the second insulating film, and a third insulating film over the conducting wire, wherein the integrated circuit and the antenna are formed over the substrate to be electrically connected to each other, and fine particles of a soft magnetic material are included in the second insulating film and the third insulating film.
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6. A semiconductor device comprising:
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a substrate, an integrated circuit including a thin film transistor, an antenna having a conducting wire, a first insulating film covering the thin film transistor, a second insulating film over the first insulating film, the conducting wire over the second insulating film, a third insulating film over the conducting wire, and a fourth insulating film over the third insulating film, wherein the integrated circuit and the antenna are formed over the substrate to be electrically connected to each other, and fine particles of a soft magnetic material are included in the second insulating film and the fourth insulating film.
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7. A semiconductor device comprising:
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a substrate, an integrated circuit including a thin film transistor, an antenna having a conducting wire, a first insulating film at least covering the conducting wire, and a second insulating film covering the first insulating film and the thin film transistor, wherein the integrated circuit and the antenna are formed over the substrate to be electrically connected to each other, the conducting wire is formed from a same material as a gate electrode of the thin film transistor, and is formed on a same layer, and fine particles of a soft magnetic material are included in the first insulating film.
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8. A semiconductor device comprising:
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a substrate, an integrated circuit including a thin film transistor, an antenna having a conducting wire, a first insulating film covering the conducting wire and the thin film transistor, and a second insulating film comprising at least one selected from the group of polyimide, epoxy, acryl and polyamide over the integrated circuit and at least adjacent to a side of the conducting wire by interposing the first insulating film therebetween, wherein the integrated circuit and the antenna are formed over the substrate to be electrically connected to each other, and particles comprising a soft magnetic material are included in the second insulating film. - View Dependent Claims (19, 21)
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9. A semiconductor device comprising:
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a substrate, an integrated circuit including a thin film transistor, an antenna having a conducting wire, an insulating film covering the conducting wire and the thin film transistor, and a resin film comprising at least one selected from the group of polyimide, epoxy, acryl and polyamide over the integrated circuit and at least adjacent to a side of the conducting wire by interposing the insulating film therebetween, wherein the integrated circuit and the antenna are formed over the substrate to be electrically connected to each other, and particles comprising a soft magnetic material are included in the resin film. - View Dependent Claims (20, 22)
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Specification