Exposure control for image sensors

• US 8,159,588 B2
• Filed: 09/28/2010
• Issued: 04/17/2012
• Est. Priority Date: 07/16/2004
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Boemler, Christian
• Primary Examiner(s): Ho, Tuan
• Assistant Examiner(s): Gebriel, Selam
• Application Number:
  US12/892,499
• Publication Number:
  US 20110013066A1
• Time in Patent Office: 567 Days
• Field of Search: 348/296, 348/297, 348/308
• US Class Current: 348/308
• CPC Class Codes: H04N 25/00 Circuitry of solid-state image sensors [SSIS]; Control thereof
• CPC Class Codes: H04N 25/623 by evacuation via the output or reset lines
• CPC Class Codes: H04N 25/706 Pixels for exposure or ambient light measuring

Abstract

An imaging system utilizes an exposure control circuit to control the length of an exposure in full frame mode. The exposure control circuit receives as an input the antiblooming current from at least a representative sample of pixels and determines when to end an exposure based on the amount of current received.

Claims

1. A pixel array comprising:

a plurality of pixels, each of said plurality of pixels comprising;

a photosensor for converting incident light into a charge,

a plurality of transistors, coupled to said photosensor, for controllably resetting said photosensor and transferring said charge to an output node, and

an antiblooming transistor arranged to take an antiblooming current from said photosensor; and

a control circuit for supplying a supply voltage to the antiblooming transistor of the at least one pixel and for disconnecting said supply voltage from the antiblooming transistor and connecting the antiblooming transistor to supply a signal to an exposure control circuit during an integration period of said photosensor, the exposure control circuit arranged to control exposure of light to the pixel photosensors.

2. The pixel array of claim 1, wherein the exposure control circuit detects an overexposure condition.

3. The pixel array of claim 1, further comprising an aggregated antibloom signal line arranged to aggregate the antiblooming signals received from each of a group of pixels, and supply aggregated signals to said exposure control circuit.

4. A method for operating a pixel, comprising:

supplying a supply voltage to a pixel node capable of receiving a signal from a integrating photosensor;

isolating the supply voltage from the node and connecting the node to an exposure control circuit during a period when said photosensor is integrating; and

controlling light exposure of said pixel by said exposure control circuit based on a signal supplied by said node.

5. A pixel for an imaging system, comprising:

a photosensor for converting incident light into a signal, and having a photosensor output for said signal;

a plurality of transistors, coupled to said photosensor output, for controllably resetting and transferring said signal to a pixel output node;

an antiblooming transistor arranged to gate an antiblooming signal from the photosensor output to an antiblooming node; and

a circuit for coupling said antiblooming node to a supply voltage and disconnecting said antiblooming node from said supply voltage during an integration period of the pixel photosensor.

6. The pixel of claim 5, wherein the antiblooming node is arranged to supply the antiblooming signal to an exposure control circuit during the integration period.

7. An imaging device, comprising:

a pixel array having a plurality of pixels arranged in rows and columns, each pixel of the array comprising;

a photosensor for integrating charge in response to receiving light;

a storage node for receiving charges from the photosensor;

a reset transistor responsive to a reset select signal for resetting said storage node with a supply voltage, the reset transistor having a first node selectively coupled to the supply voltage and a second node coupled to the storage node; and

a readout circuit for providing an output voltage to a column line based on charges stored at said storage node; and

an exposure control circuit arranged to control exposure of light to the pixel photosensors, said exposure control circuit receiving a signal from said first node of at least one pixel when said first node is uncoupled from said supply voltage during a period when said photosensor of said at least one pixel is integrating charge.

8. The imaging device of claim 7, wherein the readout circuit comprises a source follower transistor for converting charges stored at the storage node to the output voltage, the source follower transistor being powered by the supply voltage.

9. The imaging device of claim 8, wherein the readout circuit further comprises a row select transistor for switchably providing the output voltage to the column line.

10. The imaging device of claim 7, wherein said exposure control circuit is switchably connected to first nodes of a plurality of pixels.