Fabrication of a high fill ratio silicon spatial light modulator
First Claim
1. A method of fabricating an optical deflection device, the method comprising:
- providing a substrate comprising a plurality of electrode devices and a bias grid;
forming a planarized dielectric layer over the substrate;
forming a cavity in the planarized dielectric layer;
performing a layer transfer process to bond a single crystal silicon layer to the planarized dielectric layer;
forming a plurality of vias passing through the single crystal silicon layer and the planarized dielectric layer to the bias grid;
forming a plurality of electrical connections passing through the plurality of vias;
forming a hinge coupled to the substrate;
forming a planarized material layer coupled to the hinge;
forming a cavity in the planarized material layer;
forming a mirror structure filling at least a portion of the cavity; and
releasing the mirror structure.
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Abstract
A method for forming an optical deflection device includes providing a semiconductor substrate comprising an upper surface region and a plurality of drive devices within one or more portions of the semiconductor substrate. The upper surface region includes one or more patterned structure regions and at least one open region to expose a portion of the upper surface region to form a resulting surface region. The method also includes forming a planarizing material overlying the resulting surface region to fill the at least one open region and cause formation of an upper planarized layer using the fill material. The method further includes forming a thickness of silicon material at a temperature of less than 300° C. to maintain a state of the planarizing material.
29 Citations
29 Claims
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1. A method of fabricating an optical deflection device, the method comprising:
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providing a substrate comprising a plurality of electrode devices and a bias grid; forming a planarized dielectric layer over the substrate; forming a cavity in the planarized dielectric layer; performing a layer transfer process to bond a single crystal silicon layer to the planarized dielectric layer; forming a plurality of vias passing through the single crystal silicon layer and the planarized dielectric layer to the bias grid; forming a plurality of electrical connections passing through the plurality of vias; forming a hinge coupled to the substrate; forming a planarized material layer coupled to the hinge; forming a cavity in the planarized material layer; forming a mirror structure filling at least a portion of the cavity; and releasing the mirror structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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Specification