×

Bipolar select device for resistive sense memory

  • US 8,159,856 B2
  • Filed: 07/07/2009
  • Issued: 04/17/2012
  • Est. Priority Date: 07/07/2009
  • Status: Active Grant
First Claim
Patent Images

1. A resistive sense memory apparatus comprising:

  • a bipolar select device comprising;

    a semiconductor substrate;

    a plurality of collector contacts disposed in a first side of the of the semiconductor substrate, wherein each collector contact is electrically isolated from each other;

    an emitter contact layer disposed in a second side of the semiconductor substrate, the second side opposing the first side; and

    a base layer separating the plurality of collector contacts from the emitter contact layer; and

    a plurality of resistive sense memory cells, wherein one of the plurality of resistive sense memory cells is electrically coupled to one of the plurality of collector contacts and a bit line, wherein the base layer and the emitter contact layer provides an electrical path for the plurality of collector contacts.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×