Method for manufacturing nitride semiconductor element
First Claim
1. A method of fabricating a gallium nitride-based compound semiconductor light-emitting device, including forming a gallium nitride-based compound semiconductor layer whose principal surface is a non-polar plane or a semi-polar plane by metalorganic chemical vapor deposition, where parameters that define growth conditions of the metalorganic chemical vapor deposition include a pressure, a growth rate, a growth temperature, and an In supply mole fraction that is a mole fraction of an In source gas contained in a supplied Group III source gas, a curve that represents a relationship between the growth temperature and the In supply mole fraction for formation of an InxGa1-xN (0<
- x<
1) layer of an identical emission wavelength in a case where the pressure and the growth rate are constant having a saturation point which exists between a region where the growth temperature monotonically increases according to an increase of the In supply mole fraction and a region where the growth temperature saturates, the method comprising the steps of;
(A) determining the saturation point on the curve;
(A2) determining a growth condition which corresponds to the saturation point determined in step (A); and
(B) growing an InxGa1-xN (0<
x<
1) layer whose principal surface is a non-polar plane or a semi-polar plane under the determined growth condition.
1 Assignment
0 Petitions
Accused Products
Abstract
InyGa1-yN (0<y<1) layers whose principal surface is a non-polar plane or a semi-polar plane are formed by an MOCVD under different growth conditions. Then, the relationship between the growth temperature and the In supply mole fraction in a case where the pressure and the growth rate are constant is determined based on a growth condition employed for formation of InxGa1-xN (0<x<1) layers whose emission wavelengths are equal among the InyGa1-yN layers. Then, a saturation point is determined on a curve representing the relationship between the growth temperature and the In supply mole fraction, the saturation point being between a region where the growth temperature monotonically increases according to an increase of the In supply mole fraction and a region where the growth temperature saturates. Under a growth condition corresponding to this saturation point, an InxGa1-xN layer is grown.
-
Citations
11 Claims
-
1. A method of fabricating a gallium nitride-based compound semiconductor light-emitting device, including forming a gallium nitride-based compound semiconductor layer whose principal surface is a non-polar plane or a semi-polar plane by metalorganic chemical vapor deposition, where parameters that define growth conditions of the metalorganic chemical vapor deposition include a pressure, a growth rate, a growth temperature, and an In supply mole fraction that is a mole fraction of an In source gas contained in a supplied Group III source gas, a curve that represents a relationship between the growth temperature and the In supply mole fraction for formation of an InxGa1-xN (0<
- x<
1) layer of an identical emission wavelength in a case where the pressure and the growth rate are constant having a saturation point which exists between a region where the growth temperature monotonically increases according to an increase of the In supply mole fraction and a region where the growth temperature saturates, the method comprising the steps of;(A) determining the saturation point on the curve; (A2) determining a growth condition which corresponds to the saturation point determined in step (A); and (B) growing an InxGa1-xN (0<
x<
1) layer whose principal surface is a non-polar plane or a semi-polar plane under the determined growth condition. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
- x<
-
9. A gallium nitride-based compound semiconductor layer growth condition determination method for determining a condition for growing a gallium nitride-based compound semiconductor layer whose principal surface is a non-polar plane or a semi-polar plane by metalorganic chemical vapor deposition, where parameters that define growth conditions of the metalorganic chemical vapor deposition include a pressure, a growth rate, a growth temperature, and an In supply mole fraction that is a mole fraction of an In source gas contained in a supplied Group III source gas, the method comprising the steps of:
-
(a1) forming a plurality of InyGa1-yN (0<
y<
1) layers whose principal surface is a non-polar plane or a semi-polar plane by metalorganic chemical vapor deposition under different growth conditions;(a2) determining a relationship between the growth temperature and the In supply mole fraction in a case where the pressure and the growth rate are constant based on a growth condition employed for formation of InxGa1-xN (0<
x<
1) layers whose emission wavelengths are equal among the plurality of InyGa1-yN (0<
y<
1) layers; and(a3) determining a saturation point on a curve which represents the relationship between the growth temperature and the In supply mole fraction, the saturation point being between a region where the growth temperature monotonically increases according to an increase of the In supply mole fraction and a region where the growth temperature saturates. - View Dependent Claims (10, 11)
-
Specification