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Method of manufacturing substrate for forming device, and method of manufacturing nitride-based semiconductor laser diode

  • US 8,163,579 B2
  • Filed: 03/04/2008
  • Issued: 04/24/2012
  • Est. Priority Date: 12/17/2007
  • Status: Active Grant
First Claim
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1. A method of manufacturing a substrate for forming a device, the method comprising:

  • preparing a GaN substrate of which an a-plane or an m-plane is selected as a main plane;

    masking the entirety of a surface of the main plane of the GaN substrate; and

    applying etching liquid to the entirety of the surface of the masked GaN substrate, wherein the entirety of the main plane of the GaN substrate is unexposed to the etching liquid, thereby forming a crystallographic surface on the a-plane or m-plane that is exposed to the etching liquid and whichever is not the selected main plane.

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