Semiconductor and optoelectronic devices
First Claim
Patent Images
1. A method for fabricating a light-emitting integrated device, comprising:
- overlying two crystalline layers, wherein each of said two crystalline layers emits light at a different wavelength, anda third crystalline layer overlying said two crystalline layers, said third crystalline layer comprising single crystal transistors,wherein said overlying comprises transferring a crystalline layer comprising an atomic species implantation.
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Abstract
Techniques to utilize layer transfer schemes such as ion-cut to form novel light emitting diodes (LEDs), CMOS image sensors, displays, microdisplays and solar cells are disclosed.
340 Citations
26 Claims
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1. A method for fabricating a light-emitting integrated device, comprising:
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overlying two crystalline layers, wherein each of said two crystalline layers emits light at a different wavelength, and a third crystalline layer overlying said two crystalline layers, said third crystalline layer comprising single crystal transistors, wherein said overlying comprises transferring a crystalline layer comprising an atomic species implantation. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for fabricating an integrated image sensor, comprising:
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overlying a first crystalline layer on a second crystalline layer to form a combined layer, wherein one of the said first and second crystalline layers is an image sensor layer and at least one of the said first and second crystalline layers has been transferred by performing an atomic species implantation, a third crystalline layer overlying said first and second crystalline layers, said third crystalline layer comprising single crystal transistors, wherein said third crystalline layer has been transferred by performing an atomic species implantation, performing a laser lift-off, performing an etch-back, or chemical-mechanical polishing (CMP). - View Dependent Claims (11, 12, 13)
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14. A method for fabricating a display, comprising:
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overlying two crystalline layers, wherein one of said two crystalline layers emits light and the other said crystalline layer comprises single crystal transistors, and wherein said overlying comprises performing an atomic species implantation, and etching said at least one of said crystalline layers to define at least ten individual LED pixels. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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21. A method for fabricating a light emitting diode, comprising:
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Layer transfer of light emitting layers onto a substrate, wherein the method used for layer transfer is ion-cut, wherein at least one of said light emitting layers is formed epitaxially on a bulk Gallium Nitride substrate prior to layer transfer. - View Dependent Claims (22, 23, 24, 25, 26)
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Specification