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Semiconductor and optoelectronic devices

  • US 8,163,581 B1
  • Filed: 10/13/2010
  • Issued: 04/24/2012
  • Est. Priority Date: 10/13/2010
  • Status: Active Grant
First Claim
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1. A method for fabricating a light-emitting integrated device, comprising:

  • overlying two crystalline layers, wherein each of said two crystalline layers emits light at a different wavelength, anda third crystalline layer overlying said two crystalline layers, said third crystalline layer comprising single crystal transistors,wherein said overlying comprises transferring a crystalline layer comprising an atomic species implantation.

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