Method for growing carbon nanotubes, and electronic device having structure of ohmic connection to carbon element cylindrical structure body and production method thereof
First Claim
1. A method for producing an electronic device having a structure of ohmic connection to a carbon element cylindrical structure body, comprising disposing a metal material on a connection objective capable of ohmically contacting a carbon element cylindrical structure body and forming a carbon element cylindrical structure body by chemical vapor deposition using said metal material as the catalyst while accomplishing an ohmic contact between the carbon element cylindrical structure body and the connection objective,wherein the material of said connection objective is Ti, Nb, Si or C, and is alloyed with said metal material by the elevation of temperature during said chemical vapor deposition and a carbon element cylindrical structure body is grown using the particle of said metal material in said alloy as the catalyst for said chemical vapor deposition, and, at the same time, a part of the material of the connection objective is carbidized to join the carbon element cylindrical structural body to the connection objective by ohmic contact.
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Abstract
An electronic device having a structure of an ohmic connection to a carbon element cylindrical structure body, wherein a metal material is positioned inside the junction part of a carbon element cylindrical structure body joined to a connection objective and the carbon element cylindrical structure body and the connection objective are connected by an ohmic contact. Methods for producing such an electronic device are also disclosed. Further, a method for growing a carbon nanotube is disclosed.
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Citations
9 Claims
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1. A method for producing an electronic device having a structure of ohmic connection to a carbon element cylindrical structure body, comprising disposing a metal material on a connection objective capable of ohmically contacting a carbon element cylindrical structure body and forming a carbon element cylindrical structure body by chemical vapor deposition using said metal material as the catalyst while accomplishing an ohmic contact between the carbon element cylindrical structure body and the connection objective,
wherein the material of said connection objective is Ti, Nb, Si or C, and is alloyed with said metal material by the elevation of temperature during said chemical vapor deposition and a carbon element cylindrical structure body is grown using the particle of said metal material in said alloy as the catalyst for said chemical vapor deposition, and, at the same time, a part of the material of the connection objective is carbidized to join the carbon element cylindrical structural body to the connection objective by ohmic contact.
- 5. A method for producing an electronic device having a structure of ohmic connection to a carbon element cylindrical structure body, comprising forming a first stack of a first material capable of ohmically contacting a carbon element cylindrical structure body and a second material of catalyst metal disposed on said first material, heat-treating said first stack in vacuum or in a hydrogen atmosphere to form a second stack made of a lower layer composed of an alloy of the first material and the second material, an intermediate layer composed of the first material and an upper layer composed of a fine particle of the second material, and forming a carbon element cylindrical structure body by chemical vapor deposition using the fine particle of the second material on the surface of said second stack as the catalyst to incorporate the fine particle of the second material into the inside of the carbon element cylindrical structure body and at the same time, a part of the first material in the intermediate layer contacting with the bottom of the side wall of the carbon element cylindrical structure is carbidized to join the carbon element cylindrical structure and the Ti intermediate layer by ohmic contact.
Specification