Field effect transistor and process for production thereof

• US 8,164,090 B2
• Filed: 10/05/2009
• Issued: 04/24/2012
• Est. Priority Date: 10/08/2008
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Iwasaki, Tatsuya, Itagaki, Naho
• Primary Examiner(s): Wojciechowicz, Edward
• Application Number:
  US12/573,381
• Publication Number:
  US 20100084655A1
• Time in Patent Office: 932 Days
• Field of Search: 257/43, 257/66, 257/741
• US Class Current: 257/43
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A field effect transistor has a gate electrode, gate-insulating layer, a channel and a source and drain electrodes connected electrically to the channel, the channel comprising an oxide semiconductor, the source electrode or the drain electrode comprising an oxynitride.

Claims

1. A field effect transistor having a gate electrode, a gate-insulating layer, a channel and source and drain electrodes connected electrically to the channel, the channel comprising an amorphous oxide semiconductor containing Zn or In, and the source electrode or the drain electrode comprising an oxynitride containing Zn or In and having an optical band gap to absorb near-ultraviolet light.

2. The field effect transistor according to claim 1, wherein the metallic element contained in the amorphous oxide semiconductor and the metallic element contained in the oxynitride are the same.

3. The field effect transistor according to claim 2, wherein the amorphous oxide semiconductor contains Zn, In and O, and the oxynitride contains a crystal which contains Zn, In, O and N.

4. The field effect transistor according to claim 1, wherein the compositional ratio of oxygen and nitrogen contained in the oxynitride is represented by the relational expression (1):

(Nitrogen atoms)/(Nitrogen atoms+Oxygen atoms)≧

0.01 

 

(1).

5. The field effect transistor according to claim 1, wherein an optical band gap of the oxynitride is smaller than an optical band gap of the amorphous oxide semiconductor.

6. The field effect transistor according to claim 1, wherein the source electrode and the drain electrode are a source region and a drain region formed by addition of nitrogen to the amorphous oxide semiconductor constituting the channel.