CMOS image sensors including backside illumination structure

• US 8,164,126 B2
• Filed: 02/26/2008
• Issued: 04/24/2012
• Est. Priority Date: 02/26/2007
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Moon, Chang-Rok, Lee, Duck-hyung, Cho, Seong-ho
• Primary Examiner(s): Warren, Matthew E
• Assistant Examiner(s): Jiang, Fang-Xing
• Application Number:
  US12/037,691
• Publication Number:
  US 20080203452A1
• Time in Patent Office: 1,519 Days
• Field of Search: 438/59, 438/643, 257/292, 257/E27.133, 257/E31.084, 257/294, 257/347, 257/E31.115
• US Class Current: 257/292
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures

Abstract

An image sensor having a backside illumination structure can include a photo diode unit in a first wafer, where the photo diode unit includes photo diodes and transfer gate transistors coupled to respective ones of the photo diodes. A wiring line unit can be included on a second wafer that is bonded to the photo diode unit, where the wiring line unit includes wiring lines and transistors configured to process signals provided by the photo diode unit and configured to control the photo diode unit. A supporting substrate is bonded to the wiring line unit and a filter unit is located under the first wafer.

Claims

1. An image sensor having a backside illumination structure, comprising:

a photo diode unit in a first wafer, the photo diode unit comprising photo diodes and transfer gate transistors coupled to respective ones of the photo diodes, and the photo diode unit configured to be positioned in an incident light path;

a wiring line unit on a second wafer, a side of the second wafer that faces upstream in the incident light path bonded to a downstream-facing side of the photo diode unit, the wiring line unit comprising wiring lines and transistors configured to process signals provided by the photo diode unit and configured to control the photo diode unit, and the second wafer positioned between the transistors in the wiring line unit and the photo diodes;

a supporting substrate bonded to a downstream-facing side of the wiring line unit; and

a filter unit upstream in the incident light path from the first wafer such that the photo diode unit is between the filter unit and the wiring line unit.

2. The image sensor of claim 1, wherein the second wafer is implanted with hydrogen ions, and the wiring line unit includes the transistors on a region that remains after a predetermined portion of the second wafer is removed by smart-cutting.

3. The image sensor of claim 2, wherein the second wafer is bonded to the photo diode unit by being closely stacked thereon and annealed.

4. The image sensor of claim 1, wherein the photo diode unit includes respective floating diffusion regions adjacent to the photo diodes, and an insulating layer on the entire first wafer covering the transfer gate transistors.

5. The image sensor of claim 1, wherein the transistors comprise a source follower transistor, a selection transistor, and/or a reset transistor.

6. The image sensor of claim 1, wherein one transistor (1Tr/pixel) is included for one photo diode in the photo diode unit.

7. The image sensor of claim 1, wherein the first wafer has a thickness of about 10 μ

m or less.

8. The image sensor of claim 1, wherein the filter unit includes filter arrays configured to transmit light having wavelengths corresponding respective predetermined ones of the filter arrays and micro-lenses for focusing light onto the filter arrays, wherein light transmitted through the filter unit is directly incident on the photo diodes.

9. The image sensor of claim 8, wherein the wiring line unit is positioned downstream in the incident light path from the photo diodes and the filter unit.

10. The image sensor of claim 1, wherein the transfer gate transistors provide the signals processed by the transistors in the wiring line unit.

16. The image sensor of claim 10,

wherein the transfer gate transistors are between the second wafer and the photo diodes, and

wherein the transistors in the wiring line unit are between the supporting substrate and the second wafer.

11. A CMOS image sensor circuit comprising:

a photo diode unit comprising photo diodes and transfer gate transistors coupled to respective ones of the photo diodes, the photo diode unit configured to be positioned in an incident light path;

a micro-lens and filter unit upstream in the incident light path from the photo diode unit;

a wiring line unit positioned downstream in the incident light path from the photo diode unit, the wiring line unit comprising wiring lines and transistors configured to process signals provided by the photo diode unit; and

a wafer between the transistors in the wiring line unit and the photo diodes.

12. A CMOS image sensor circuit according to the claim 11 wherein the wiring line unit is positioned on a first side of the photo diode unit and the micro-lens and filter unit is positioned on a second side of the photo diode unit that is opposite the first side.

13. A CMOS image sensor circuit according to the claim 11 wherein a single pass transistor is included for a corresponding single one of the photo diodes in the photo diode unit.

14. A CMOS image sensor circuit according to claim 11, wherein the transfer gate transistors provide the signals processed by the transistors in the wiring line unit.

15. A CMOS image sensor circuit according to claim 14,

further comprising contacts connecting the transfer gate transistors and the transistors in the wiring line unit,

wherein the transfer gate transistors are between the wafer and the photo diodes.