Thin film transistor array, method for manufacturing the same and active matrix display

• US 8,164,700 B2
• Filed: 03/25/2008
• Issued: 04/24/2012
• Est. Priority Date: 03/28/2007
• Status: Active Grant

• Current Assignee: Toppan Printing Co., Ltd. (TOPPAN Holdings, Inc.)
• Original Assignee: Toppan Printing Co., Ltd. (TOPPAN Holdings, Inc.)
• Inventors: Hatta, Kaoru, Okubo, Toru, Matsubara, Ryohei
• Primary Examiner(s): Caley, Michael
• Application Number:
  US12/079,354
• Publication Number:
  US 20080239189A1
• Time in Patent Office: 1,491 Days
• Field of Search: 349/42, 349/43, 257/59, 257/72
• US Class Current: 349/42
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/471 the gate dielectric comprising only organic materials
• CPC Class Codes: H10K 10/80 Constructional details
• CPC Class Codes: H10K 10/88 Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 19/10 comprising field-effect transistors
• CPC Class Codes: H10K 71/135 using ink-jet printing
• CPC Class Codes: H10K 71/611 using printing deposition, e.g. ink jet printing
• CPC Class Codes: H10K 77/111 Flexible substrates
• CPC Class Codes: H10K 85/113 Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
• CPC Class Codes: H10K 85/115 Polyfluorene; Derivatives thereof
• CPC Class Codes: H10K 85/151 Copolymers

Abstract

One embodiment of the present invention is a thin film transistor array including an insulating substrate, a plurality of thin film transistors and a sealing layer. The sealing layer is stripe-shaped and covers a plurality of the thin film transistors. The sealing layer is formed over the insulating substrate.

Claims

1. A thin film transistor array, comprising:

an insulating substrate;

a plurality of thin film transistors, each of the thin film transistors comprising a source electrode, a drain electrode, a gate electrode and a semiconductor layer between the source electrode and the drain electrode;

and

a plurality of sealing layers, each of the sealing layers being stripe-shaped, and each of the sealing layers covering the plurality of the thin film transistors and formed over the insulating substrate.

2. The thin film transistor array according to claim 1,

wherein each of the sealing layers includes a fluorinated compound.

3. The thin film transistor array according to claim 1,

wherein each of the sealing layers includes an inorganic insulating material.

4. The thin film transistor array according to claim 1,

wherein each of the sealing layers includes silicon oxynitride.

5. A method for manufacturing the thin film transistor array according to claim 1,

the method comprising:

forming each of the sealing layers by a printing method.

6. The method for manufacturing the thin film transistor array according to claim 5,

wherein the printing method is a screen printing.

7. The method for manufacturing the thin film transistor array according to claim 5,

wherein the printing method is a flexo printing.

8. The method for manufacturing the thin film transistor array according to claim 5,

wherein at least one process among a process of forming a gate electrode, a process of forming a source electrode and a drain electrode and a process of forming a pixel electrode is performed by a screen printing, a flexo printing or a reverse type offset printing.

9. An active matrix display, comprising:

the thin film transistor array according to claim 1;

and

an image display medium.

10. The active matrix display according to claim 9,

wherein the image display medium is an electrophoretic type.

11. The active matrix display according to claim 9,

wherein the image display medium is a liquid crystal type.

12. The active matrix display according to claim 9,

wherein the image display medium is an organic electroluminescence type.

13. A thin film transistor array, comprising:

an insulating substrate;

a plurality of thin film transistors,

each of the thin film transistors, comprising;

a gate electrode on the insulating substrate;

a gate insulating layer;

a source electrode and a drain electrode, the gate electrode overlapping the source electrode and the drain electrode through the gate insulating layer;

a semiconductor layer between the source electrode and the drain electrode;

a pixel electrode connected to the drain electrode; and

a capacitor electrode, the pixel electrode overlapping the capacitor electrode through the gate insulating layer,

the thin film transistors arranged in a matrix-shaped and being with a plurality of gate wires connected to a plurality of the gate electrodes and a plurality of source wires connected to a plurality of the source electrodes; and

a plurality of sealing layers, each of the sealing layers formed over at least the semiconductor layer, each of the sealing layers being stripe-shaped over the insulating substrate and each of the sealing layers covering a plurality of the thin film transistors.

14. The thin film transistor array according to claim 13,

wherein each of the sealing layers covers the source wires.

15. The thin film transistor array according to claim 13,

wherein an interlayer dielectric covers part of the gate wires and a capacitor wire connected to the capacitor electrode,

and

wherein an upper pixel electrode connected to the pixel electrode is formed over the interlayer dielectric.

16. The thin film transistor array according to claim 15,

wherein the interlayer dielectric is a dot-shaped type formed between the sealing layers or a stripe-shaped type perpendicular to each of the sealing layers, the stripe-shaped type covering a plurality of the thin film transistors.

17. The thin film transistor array according to claim 15,

wherein the interlayer dielectric includes a fluorinated compound.

18. The thin film transistor array according to claim 13,

wherein the semiconductor layer includes an organic compound.

19. The thin film transistor array according to claim 13,

wherein the semiconductor layer includes an inorganic oxide.