Power source circuit
First Claim
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1. A semiconductor device comprising:
- a rectifier circuit comprising a first transistor and a first capacitor,a comparing circuit, anda voltage generation circuit,wherein;
a first input terminal of the rectifier circuit is electrically connected to a first input terminal of the voltage generation circuit,a second input terminal of the rectifier circuit is electrically connected to an output terminal of the voltage generation circuit,an output terminal of the rectifier circuit is electrically connected to a first input terminal of the comparing circuit,an output terminal of the comparing circuit is electrically connected to a second input terminal of the voltage generation circuit,the first input terminal of the rectifier circuit is electrically connected to a first terminal of the first capacitor,the second input terminal of the rectifier circuit is electrically connected to a second gate of the first transistor,the output terminal of the rectifier circuit is electrically connected to a second terminal of the first transistor,a second terminal of the first capacitor is electrically connected to a first terminal of the first transistor and a first gate of the first transistor,the comparing circuit is configured to output a first signal to the output terminal of the comparing circuit determined by comparing a first voltage of the first input terminal of the comparing circuit with a reference voltage of a second input terminal of the comparing circuit,the voltage generation circuit is configured to output a second voltage to the output terminal of the voltage generation circuit in accordance with the first signal, anda threshold voltage of the first transistor is controllable by the second voltage.
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Abstract
A semiconductor device is provided, which comprises a rectifier circuit configured to generate a first voltage from a first signal inputted from an input terminal, a comparing circuit configured to compare a reference voltage and the first voltage inputted from the rectifier circuit and to output a second signal to a switch, and a voltage generation circuit configured to generate a second voltage from the first signal inputted from the input terminal. The rectifier circuit includes a transistor including at least a control terminal, and the voltage generation circuit inputs the second voltage to the control terminal when the switch is turned on in accordance with the second signal.
31 Citations
21 Claims
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1. A semiconductor device comprising:
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a rectifier circuit comprising a first transistor and a first capacitor, a comparing circuit, and a voltage generation circuit, wherein; a first input terminal of the rectifier circuit is electrically connected to a first input terminal of the voltage generation circuit, a second input terminal of the rectifier circuit is electrically connected to an output terminal of the voltage generation circuit, an output terminal of the rectifier circuit is electrically connected to a first input terminal of the comparing circuit, an output terminal of the comparing circuit is electrically connected to a second input terminal of the voltage generation circuit, the first input terminal of the rectifier circuit is electrically connected to a first terminal of the first capacitor, the second input terminal of the rectifier circuit is electrically connected to a second gate of the first transistor, the output terminal of the rectifier circuit is electrically connected to a second terminal of the first transistor, a second terminal of the first capacitor is electrically connected to a first terminal of the first transistor and a first gate of the first transistor, the comparing circuit is configured to output a first signal to the output terminal of the comparing circuit determined by comparing a first voltage of the first input terminal of the comparing circuit with a reference voltage of a second input terminal of the comparing circuit, the voltage generation circuit is configured to output a second voltage to the output terminal of the voltage generation circuit in accordance with the first signal, and a threshold voltage of the first transistor is controllable by the second voltage. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a rectifier circuit comprising a first transistor and a first capacitor, a comparing circuit, and a voltage generation circuit, wherein; a first input terminal of the rectifier circuit is electrically connected to a first input terminal of the voltage generation circuit, a second input terminal of the rectifier circuit is electrically connected to an output terminal of the voltage generation circuit, an output terminal of the rectifier circuit is electrically connected to a first input terminal of the comparing circuit, an output terminal of the comparing circuit is electrically connected to a second input terminal of the voltage generation circuit, the first input terminal of the rectifier circuit is electrically connected to a first terminal of the first capacitor, the second input terminal of the rectifier circuit is electrically connected to a second gate of the first transistor, the output terminal of the rectifier circuit is electrically connected to a second terminal of the first transistor, a second terminal of the first capacitor is electrically connected to a first terminal of the first transistor and a first gate of the first transistor, the first transistor comprises a semiconductor layer between the first gate of the first transistor and the second gate of the first transistor, the comparing circuit is configured to output a first signal to the output terminal of the comparing circuit determined by comparing a first voltage of the first input terminal of the comparing circuit with a reference voltage of a second input terminal of the comparing circuit, the voltage generation circuit is configured to output a second voltage to the output terminal of the voltage generation circuit in accordance with the first signal, and a threshold voltage of the first transistor is controllable by the second voltage. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A semiconductor device comprising:
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a rectifier circuit comprising a first transistor and a first capacitor, a comparing circuit, and a voltage generation circuit, wherein; a first input terminal of the rectifier circuit is electrically connected to a first input terminal of the voltage generation circuit, a second input terminal of the rectifier circuit is electrically connected to an output terminal of the voltage generation circuit, an output terminal of the rectifier circuit is electrically connected to a first input terminal of the comparing circuit, an output terminal of the comparing circuit is electrically connected to a second input terminal of the voltage generation circuit, the first input terminal of the rectifier circuit is electrically connected to a first terminal of the first capacitor, the second input terminal of the rectifier circuit is electrically connected to a second gate of the first transistor, the output terminal of the rectifier circuit is electrically connected to a second terminal of the first transistor, a second terminal of the first capacitor is electrically connected to a first terminal of the first transistor and a first gate of the first transistor, the first transistor comprises a single crystal semiconductor layer between the first gate of the first transistor and the second gate of the first transistor, the comparing circuit is configured to output a first signal to the output terminal of the comparing circuit determined by comparing a first voltage of the first input terminal of the comparing circuit with a reference voltage of a second input terminal of the comparing circuit, the voltage generation circuit is configured to output a second voltage to the output terminal of the voltage generation circuit in accordance with the first signal, and a threshold voltage of the first transistor is controllable by the second voltage. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsFujita, Masashi, Kato, Kiyoshi
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Primary Examiner(s)Berhane, Adolf
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Assistant Examiner(s)GBLENDE, JEFFREY A
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Application NumberUS12/051,473Publication NumberTime in Patent Office1,497 DaysField of Search363/81, 363/84, 363/127, 327/535, 327537-541, 327/543US Class Current363/127CPC Class CodesG06K 19/0701 at least one of the integra...G06K 19/0723 the record carrier comprisi...
