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Method for manufacturing light emitting diode

  • US 8,168,455 B2
  • Filed: 09/10/2009
  • Issued: 05/01/2012
  • Est. Priority Date: 02/20/2009
  • Status: Expired due to Fees
First Claim
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1. A method for manufacturing light emitting diode comprising the steps of:

  • transferring an epitaxial structure to a transfer substrate and the epitaxial structure having a first semiconductor layer, a light emitting layer and a second semiconductor layer stacked on the transfer substrate in turn;

    wet etching the epitaxial structure, through the second semiconductor layer to the first semiconductor layer and forming a plurality of pyramids on the epitaxial structure;

    forming a protective layer on the plurality of pyramids on the epitaxial structure; and

    forming a transparent electrode layer on the epitaxial structure and on the protective layer.

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