Method for manufacturing light emitting diode
First Claim
Patent Images
1. A method for manufacturing light emitting diode comprising the steps of:
- transferring an epitaxial structure to a transfer substrate and the epitaxial structure having a first semiconductor layer, a light emitting layer and a second semiconductor layer stacked on the transfer substrate in turn;
wet etching the epitaxial structure, through the second semiconductor layer to the first semiconductor layer and forming a plurality of pyramids on the epitaxial structure;
forming a protective layer on the plurality of pyramids on the epitaxial structure; and
forming a transparent electrode layer on the epitaxial structure and on the protective layer.
1 Assignment
0 Petitions
Accused Products
Abstract
A method for manufacturing light emitting diode (LED) is revealed. By means of wet etching, a plurality of pyramids is formed on epitaxial structure. The depth of the pyramids is beyond a n-type semiconductor layer, reaching a p-type semiconductor layer. Thus light emitting directions of the LED made by the method of the present invention are increased. Therefore, the light emitting efficiency of LED is improved.
-
Citations
18 Claims
-
1. A method for manufacturing light emitting diode comprising the steps of:
-
transferring an epitaxial structure to a transfer substrate and the epitaxial structure having a first semiconductor layer, a light emitting layer and a second semiconductor layer stacked on the transfer substrate in turn; wet etching the epitaxial structure, through the second semiconductor layer to the first semiconductor layer and forming a plurality of pyramids on the epitaxial structure; forming a protective layer on the plurality of pyramids on the epitaxial structure; and forming a transparent electrode layer on the epitaxial structure and on the protective layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
-
Specification