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Oxide etching method

  • US 8,168,544 B2
  • Filed: 07/18/2007
  • Issued: 05/01/2012
  • Est. Priority Date: 08/01/2006
  • Status: Expired due to Fees
First Claim
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1. An etching method of an amorphous oxide in a structure comprising an ITO layer and an amorphous oxide layer, the method comprising etching the amorphous oxide layer, which comprises In and Ga, In and Zn, or In, Ga and Zn, using an etchant comprising any one of acetic acid, citric acid, hydrochloric acid, and perchloric acid at an etch rate larger than an etch rate of the ITO film.

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