GaN-based semiconductor light-emitting element, light-emitting element assembly, light-emitting apparatus, method of driving GaN-based semiconductor light-emitting element, and image display apparatus
First Claim
1. A GaN-based semiconductor light-emitting element comprising:
- (A) a first GaN-based compound semiconductor layer of n-conductivity type;
(B) an active layer having a multi-quantum well structure including well layers and barrier layers that separate adjacent well layers;
(C) a second GaN-based compound semiconductor layer of p-conductivity type;
(D) a first electrode that is electrically connected to the first GaN-based compound semiconductor layer; and
(E) a second electrode that is electrically connected to the second GaN-based compound semiconductor layer,wherein at least one of the barrier layers constituting the active layer is composed of a varying-composition barrier layer, andthe composition of the varying-composition barrier layer varies in a thickness direction thereof so that the band-gap energy in a first region of the varying-composition barrier layer, the first region being adjacent to a boundary between a well layer disposed on a side closer to the second GaN-based compound semiconductor layer and the varying-composition barrier layer, is lower than the band-gap energy in a second region of the varying-composition barrier layer, the second region being adjacent to a boundary between a well layer disposed on a side closer to the first GaN-based compound semiconductor layer and the varying-composition barrier layer.
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Abstract
A GaN-based semiconductor light-emitting element is provided and includes a first GaN-based compound semiconductor layer; an active layer having a multi-quantum well structure; and a second GaN-based compound semiconductor layer. At least one of barrier layers constituting the active layer is composed of a varying-composition barrier layer, and the composition of the varying-composition barrier layer varies in the thickness direction thereof so that the band-gap energy in a region of the varying-composition barrier layer, the region being adjacent to a boundary between a well layer disposed closer to the second GaN-based compound semiconductor layer and the varying-composition barrier layer, is lower than that in a region of the varying-composition barrier layer, the region being adjacent to a boundary between a well layer disposed closer to the first GaN-based compound semiconductor layer and the varying-composition barrier layer.
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Citations
19 Claims
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1. A GaN-based semiconductor light-emitting element comprising:
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(A) a first GaN-based compound semiconductor layer of n-conductivity type; (B) an active layer having a multi-quantum well structure including well layers and barrier layers that separate adjacent well layers; (C) a second GaN-based compound semiconductor layer of p-conductivity type; (D) a first electrode that is electrically connected to the first GaN-based compound semiconductor layer; and (E) a second electrode that is electrically connected to the second GaN-based compound semiconductor layer, wherein at least one of the barrier layers constituting the active layer is composed of a varying-composition barrier layer, and the composition of the varying-composition barrier layer varies in a thickness direction thereof so that the band-gap energy in a first region of the varying-composition barrier layer, the first region being adjacent to a boundary between a well layer disposed on a side closer to the second GaN-based compound semiconductor layer and the varying-composition barrier layer, is lower than the band-gap energy in a second region of the varying-composition barrier layer, the second region being adjacent to a boundary between a well layer disposed on a side closer to the first GaN-based compound semiconductor layer and the varying-composition barrier layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A light-emitting element assembly comprising:
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a supporting member; and a GaN-based semiconductor light-emitting element disposed on the supporting member, wherein the GaN-based semiconductor light-emitting element includes (A) a first GaN-based compound semiconductor layer of n-conductivity type; (B) an active layer having a multi-quantum well structure including well layers and barrier layers that separate adjacent well layers; (C) a second GaN-based compound semiconductor layer of p-conductivity type; (D) a first electrode that is electrically connected to the first GaN-based compound semiconductor layer; and (E) a second electrode that is electrically connected to the second GaN-based compound semiconductor layer, in which at least one of the barrier layers constituting the active layer is composed of a varying-composition barrier layer, and the composition of the varying-composition barrier layer varies in a thickness direction thereof so that the band-gap energy in a first region of the varying-composition barrier layer, the first region being adjacent to a boundary between a well layer disposed on a side closer to the second GaN-based compound semiconductor layer and the varying-composition barrier layer, is lower than the band-gap energy in a second region of the varying-composition barrier layer, the second region being adjacent to a boundary between a well layer disposed on a side closer to the first GaN-based compound semiconductor layer and the varying-composition barrier layer.
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17. A light-emitting apparatus comprising:
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(a) a GaN-based semiconductor light-emitting element; and (b) a color conversion material that is excited by light emitted from the GaN-based semiconductor light-emitting element to emit light having a wavelength different from the wavelength of the emitted light, wherein the GaN-based semiconductor light-emitting element includes (A) a first GaN-based compound semiconductor layer of n-conductivity type; (B) an active layer having a multi-quantum well structure including well layers and barrier layers that separate adjacent well layers; (C) a second GaN-based compound semiconductor layer of p-conductivity type; (D) a first electrode that is electrically connected to the first GaN-based compound semiconductor layer; and (E) a second electrode that is electrically connected to the second GaN-based compound semiconductor layer, in which at least one of the barrier layers constituting the active layer is composed of a varying-composition barrier layer, and the composition of the varying-composition barrier layer varies in a thickness direction thereof so that the band-gap energy in a first region of the varying-composition barrier layer, the first region being adjacent to a boundary between a well layer disposed on a side closer to the second GaN-based compound semiconductor layer and the varying-composition barrier layer, is lower than the band-gap energy in a second region of the varying-composition barrier layer, the second region being adjacent to a boundary between a well layer disposed on a side closer to the first GaN-based compound semiconductor layer and the varying-composition barrier layer.
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18. A method of driving a GaN-based semiconductor light-emitting element that includes
(A) a first GaN-based compound semiconductor layer of n-conductivity type; -
(B) an active layer having a multi-quantum well structure including well layers and barrier layers that separate adjacent well layers; (C) a second GaN-based compound semiconductor layer of p-conductivity type; (D) a first electrode that is electrically connected to the first GaN-based compound semiconductor layer; and (E) a second electrode that is electrically connected to the second GaN-based compound semiconductor layer, wherein at least one of the barrier layers constituting the active layer is composed of a varying-composition barrier layer, and the composition of the varying-composition barrier layer varies in a thickness direction thereof so that the band-gap energy in a first region of the varying-composition barrier layer, the first region being adjacent to a boundary between a well layer disposed on a side closer to the second GaN-based compound semiconductor layer and the varying-composition barrier layer, is lower than the band-gap energy in a second region of the varying-composition barrier layer, the second region being adjacent to a boundary between a well layer disposed on a side closer to the first GaN-based compound semiconductor layer and the varying-composition barrier layer, the method comprising; applying a current to the active layer at a current density of 50 amperes/cm2 or more.
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19. An image display apparatus comprising:
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a GaN-based semiconductor light-emitting element for displaying an image, wherein the GaN-based semiconductor light-emitting element includes (A) a first GaN-based compound semiconductor layer of n-conductivity type; (B) an active layer having a multi-quantum well structure including well layers and barrier layers that separate adjacent well layers; (C) a second GaN-based compound semiconductor layer of p-conductivity type; (D) a first electrode that is electrically connected to the first GaN-based compound semiconductor layer; and (E) a second electrode that is electrically connected to the second GaN-based compound semiconductor layer, in which at least one of the barrier layers constituting the active layer is composed of a varying-composition barrier layer, and the composition of the varying-composition barrier layer varies in a thickness direction thereof so that the band-gap energy in a first region of the varying-composition barrier layer, the first region being adjacent to a boundary between a well layer disposed on a side closer to the second GaN-based compound semiconductor layer and the varying-composition barrier layer, is lower than the band-gap energy in a second region of the varying-composition barrier layer, the second region being adjacent to a boundary between a well layer disposed on a side closer to the first GaN-based compound semiconductor layer and the varying-composition barrier layer.
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Specification