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Semiconductor devices including first and second silicon interconnection regions

  • US 8,169,074 B2
  • Filed: 06/30/2010
  • Issued: 05/01/2012
  • Est. Priority Date: 07/23/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first interconnection including a first silicon interconnection region and a first metal interconnection region stacked sequentially on a substrate; and

    a second interconnection including a second silicon interconnection region and a second metal interconnection region stacked sequentially on the substrate,wherein a bottom surface of the second silicon interconnection region is disposed at substantially the same level as a bottom surface of the first silicon interconnection region, andwherein the second silicon interconnection region has a lower resistivity than the first silicon interconnection region.

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